SGC4486Z datasheet, PDF - EEWORLD Datasheet

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SGC4486Z

50MHz to

4000MHz

Active Bias Sili-

con Germa-

nium

Cascadable

Gain Block

SGC4486Z

50MHz to 4000MHz ACTIVE BIAS SILICON

GERMANIUM CASCADABLE GAIN BLOCK

Package: SOT-86

Product Description

RFMD’s SGC4486Z is a high performance SiGe HBT MMIC amplifier utiliz-

ing a Darlington configuration with a patented active bias network. The

active bias network provides stable current over temperature and process

Beta variations. Designed to run directly from a 3V supply, the SGC4486Z

does not require a dropping resistor as compared to typical Darlington

amplifiers. The SGC4486Z is designed for high linearity 3V gain block

applications that require small size and minimal external components. It is

internally matched to 50Ω.

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

20

Features



Single Fixed 3V Supply

No Dropping Resistor

Required

Patented Self-Bias Circuitry

P

1dB

=12.7dBm at 1950MHz

OIP

3

=27.5dBm at 1950MHz

Robust 1000V ESD, Class 1C

HBM

PA Driver Amplifier

Cellular, PCS, GSM, UMTS,

WCDMA

IF Amplifier

Wireless Data, Satellite

Gain & Return Loss

30

S21

V

D

= 3V, I

D

= 52mA

Applications



Gain, RL (dB)

InGaP HBT

SiGe BiCMOS

Si BiCMOS

10

0

-10

-20

-30

0

0.5

1

1.5

2

2.5

3

3.5

4

Bias Tee Data, Z

S

= Z

L

= 50 Ohms, T

L

= 25C

S22

S11



SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS



Frequency (GHz)

Parameter

Small Signal Gain

Min.

19.0

13.0

Specification

Typ.

Max.

Unit

Condition

20.5

22.0

dB

850MHz

14.5

16.0

dB

1950MHz

12.3

dB

2400MHz

Output Power at 1dB Compression

13.8

dBm

850MHz

11.7

12.7

dBm

1950MHz

12.4

dBm

2400MHz

Output Third Order Intercept Point

29.0

dBm

850MHz

25.5

27.5

dBm

1950MHz

26.5

dBm

2400MHz

Input Return Loss

10.5

14.5

dB

1950MHz

Output Return Loss

7.5

11.5

dB

1950MHz

Noise Figure

3.4

4.4

dB

1930MHz

Thermal Resistance

145

°C/W

junction - lead

Device Operating Voltage

3.0

V

Device Operating Current

46.0

52.0

58.0

mA

Test Conditions: V

D

=3V, I

D

=52mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=-5dBm, T

L

=25°C, Z

S

=Z

L

=50Ω, Bias Tee Data

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS100813

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 6

SGC4486Z

Absolute Maximum Ratings

Parameter

Device Current (I

CE

)

Device Voltage (V

CE

)

RF Input Power* (See Note)

Junction Temp (T

J

)

Operating Temp Range (T

L

)

Storage Temp

ESD Rating - Human Body Model

(HBM)

Moisture Sensitivity Level

Rating

110

4

12

+150

-40 to +85

+150

Class 1C

MSL 1

Unit

mA

V

dBm

°C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

*Note: Load condition Z

L

=50Ω

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

I

D

V

D

<(T

J

-T

L

)/R

TH

, j-l and T

L

=T

LEAD

Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee)

Parameter

Unit

dB

dBm

dB

100

MHz

23.5

30.5

16.1

24.0

25.0

500

MHz

22.5

29.5

14.4

15.5

17.0

26.0

850

MHz

20.5

29.0

13.8

16.5

25.0

3.1

1950

MHz

14.5

27.5

12.7

14.5

11.5

20.5

3.4

2400

MHz

12.3

26.5

12.4

14.5

12.0

19.0

3.9

3500

MHz

9.5

23.5

10.6

13.0

11.0

17.5

4.8

Small Signal Gain (G)

Output Third Order Intercept Point (OIP

3

)

Output Power at 1dB Compression (P

1dB

)

Input Return Loss (IRL)

Output Return Loss (ORL)

Reverse Isolation (S

12

)

Noise Figure (NF)

dB

2.8

Test Conditions: V

D

=3V I

D

=52mA Typ. OIP

3

Tone Spacing=1MHz, P

OUT

per tone=-5dBm

T

L

=25°C Z

S

=Z

L

=50Ω

Typical Performance with Bias Tee, V

D

=3V, I

D

=52mA

OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing)

36

34

32

21

19

17

P1dB vs. Frequency

OIP3 (dBm)

30

28

26

25C

24

22

20

0

0.5

1

1.5

2

2.5

3

3.5

-40C

85C

P1dB (dBm)

15

13

11

9

0

0.5

1

1.5

2

2.5

3

3.5

25C

-40C

85C

Frequency (GHz)

2 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS100813

SGC4486Z

Typical Performance with Bias Tee, V

D

= 3V, I

D

= 52mA

NF vs. Frequency

6.0

80

+25C

Current vs. Voltage

70

5.0

60

-40C

+85C

NF (dB)

4.0

50

Id (mA)

25C

85C

0

0.5

1

1.5

2

2.5

3

3.5

40

30

20

10

3.0

2.0

1.0

0

0.5

1

1.5

2

2.5

3

3.5

4

Frequency (GHz)

Vd (V)

|S11| over Frequency

0

-5

|S21| over Frequency

26

22

Gain (dB)

-10

S11 (dB)

18

14

10

6

25C

-40C

85C

-15

-20

-25

-30

0

0.5

1

1.5

2

2.5

3

3.5

4

25C

-40C

85C

0

0.5

1

1.5

2

2.5

3

3.5

4

Frequency (GHz)

|S12| over Frequency

0

-5

25C

-40C

85C

-15

-20

-25

-30

0

0.5

1

1.5

2

2.5

3

3.5

4

0

-5

-10

|S22| over Frequency

S12 (dB)

-10

S22 (dB)

-15

-20

-25

-30

0

0.5

1

1.5

2

2.5

3

3.5

4

25C

-40C

85C

Frequency (GHz)

DS100813

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 6

SGC4486Z

86 PCB Pad Layout

Dimensions in inches [millimeters]

Notes:

1. Provide a large ground pad area under

device pins 2 and 4 with several plated-

through holes placed as shown.

2. 1-2 ounce finished copper thickness is

recommended.

3. RF I/O lines are 50Ω

RF

IN

RF

OUT

86 Nominal Package Drawing

Dimensions in inches (millimeters)

Refer to drawing posted at www.rfmd.com for tolerances.

4 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS100813

SGC4486Z

Application Schematic

Vd

Application Circuit Element Values

1uF

1000pF

C3

L1

1,2

RF IN

C1

3

SGC-4486Z

Reference

Designator

100-2000MHz

2000-4000MHz

C1

1000pF

100pF

120nH

2.7pF

6.8pF

39nH

6

C2

RF OUT

C2

C3

L1

4,5

Evaluation Board Layout

1uF

1000pF

C3

L1

C1

C2

DS100813

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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