TN0620N3-GP005 datasheet, PDF - EEWORLD Datasheet

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TN0620N3-GP005: DescriptionSmall Signal Field-Effect Transistor,; CategoryDiscrete semiconductor The transistor; File Size600KB，5 Pages; ManufacturerSupertex

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TN0620N3-GP005 Overview

Small Signal Field-Effect Transistor,

TN0620N3-GP005 Parametric

Parameter Name	Attribute value
Maker	Supertex
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	0.25 A
Maximum drain-source on-resistance	6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	35 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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Supertex inc.

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

►

Low threshold - 1.6V max.

High input impedance

Low input capacitance - 110pF typical

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

TN0620

General Description

Applications

►

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input impedance

and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Ordering Information

Part Number

TN0620N3-G

TN0620N3-G P002

TN0620N3-G P003

TN0620N3-G P005

TN0620N3-G P013

TN0620N3-G P014

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

Product Summary

Packing

1000/Bag

DSS

/BV

DGS

200V

DS(ON)

(max)

Package Option

TO-92

D(ON)

(min)

GS(th)

(max)

6.0Ω

1.0A

1.6V

TO-92

2000/Reel

Pin Configuration

DRAIN

SOURCE

Absolute Maximum Ratings

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Value

DSS

DGS

±20V

-55

C to +150

GATE

TO-92

Product Marking

SiTN

06 20

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

TO-92

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Typical Thermal Resistance

Package

TO-92

132

C/W

Package may or may not include the following marks: Si or

Doc.# DSFP-TN0620

B080813

Supertex inc.

www.supertex.com

TN0620N3-GP005 Related Products

	TN0620N3-GP005	TN0620N3-GP013	TN0620N3-GP002	TN0620N3-GP003	TN0620N3-GP014
Description	Small Signal Field-Effect Transistor,	Small Signal Field-Effect Transistor,	Small Signal Field-Effect Transistor,	Small Signal Field-Effect Transistor,	Small Signal Field-Effect Transistor,
Maker	Supertex	Supertex	Supertex	Supertex	Supertex
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V	200 V	200 V
Maximum drain current (ID)	0.25 A	0.25 A	0.25 A	0.25 A	0.25 A
Maximum drain-source on-resistance	6 Ω	6 Ω	6 Ω	6 Ω	6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	35 pF	35 pF	35 pF	35 pF	35 pF
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
surface mount	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON

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