Gre
r
Pro
STU/D624S
Ver 1.0
SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
60V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
TO-252 and TO-251 Package.
@VGS=10V
@VGS=4.5V
I
D
35A
R
DS(ON)
(m ) Max
17.5
30
G
S
G
D
S
STU SERIES
TO-252AA(D-PAK)
STD SERIES
TO-251(I-PAK)
ABSOLUTE MAXIMUM RATINGS (
T
C
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
d
a
Limit
60
±20
T
C
=25°C
T
C
=70°C
35
28
102
144
T
C
=25°C
T
C
=70°C
42
27
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JC
R
JA
Thermal Resistance, Junction-to-Case
a
a
3
50
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Aug,01,2011
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STU/D624S
ELECTRICAL CHARACTERISTICS
(
T
C
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
V
DS
=48V , V
GS
=0V
Ver 1.0
Min
60
Typ
Max
Units
V
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
1
±100
uA
nA
V
GS
= ±20V , V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
Drain-Source On-State Resistance
Forward Transconductance
c
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=17.5A
V
GS
=4.5V , I
D
=13.4A
V
DS
=10V , I
D
=17.5A
2
2.4
14.0
22.5
34
2260
142
115
4
17.5
30.0
V
m ohm
m ohm
S
pF
pF
pF
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On Delay Time
tr
Rise Time
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
V
DS
=25V,V
GS
=0V
f=1.0MHz
V
DD
=30V
I
D
=1A
V
GS
=10V
R
GEN
= 6 ohm
V
DS
=30V,I
D
=17.5A,V
GS
=10V
V
DS
=30V,I
D
=17.5A,
V
GS
=10V
44
31
70
18
32
4.5
10
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
V
SD
Diode Forward Voltage
V
GS
=0V,I
S
=5A
0.79
1.3
V
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
J
=25
°
C,L=0.5mH,V
DD
= 30V.(See Figure13)
Aug,01,2011
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STU/D624S
Ver 1.0
25
V
GS
=10V
30
20
V
GS
=4.5V
15
V
GS
=4V
I
D
, Drain Current(A)
I
D
, Drain Current(A)
24
Tj=125 C
18
10
12
25 C
6
0
-55 C
5
V
GS
=3.5V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.9
1.8
2.7
3.6
4.5
5.4
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
42
2.0
Figure 2. Transfer Characteristics
R
DS(on)
, On-Resistance
Normalized
35
1.8
1.6
1.4
1.2
1.0
0
R
DS(on)
(m
Ω
)
28
21
14
7
0
1
5
V
GS
=10V
I
D
=17.5A
V
GS
=4.5V
V
GS
=10V
V
GS
=4.5V
I
D
=13.4A
10
15
20
25
0
25
50
75
100
125
I
D
, Drain Current(A)
Tj, Junction Temperature(°C )
150
Tj(°C
)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100 125 150
1.15
V
DS
=V
GS
I
D
=250uA
I
D
=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(°C )
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,01,2011
3
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STU/D624S
Ver 1.0
40
20
Is, Source-drain current(A)
I
D
=17.5A
35
30
25
20
75 C
15
0
0
2
4
6
8
10
25 C
125 C
125 C
10
R
DS(on)
(m
Ω
)
5
75 C
25 C
1
0
0.3
0.6
0.9
1.2
1.5
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
V
GS
, Gate to Source Voltage(V)
2700
Ciss
2250
1800
1350
900
Coss
450
Crss
0
0
5
10
15
20
25
30
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
C, Capacitance(pF)
8
V
DS
=30V
I
D
=17.5A
6
4
2
0
0
5
10
15
20
25
30
35
40
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
300
100
I
D
, Drain Current(A)
TD(off )
100
N)
Lim
it
1m
10
m
DC
s
10
10
us
Switching Time(ns)
TD(on)
0u
Tr
Tf
10
R
DS
(O
s
s
10
1
VDS=30V,ID=1A
VGS=10V
1
1
10
100
0.1
0.1
V
GS
=10V
Single Pulse
T
A
=25 C
1
10
100
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Aug,01,2011
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STU/D624S
Ver 1.0
V
(BR)DSS
t
p
L
V
DS
R
G
20V
D.U.T
I
AS
t
p
0.01
+
-
V
DD
I
AS
Unclamped Inductive Waveforms
Figure 13b.
Uncamped Inductive Test Circuit
Figure 13a.
2
1
D=0.5
Normalized Transient
Thermal Resistance
0.2
0.1
0.1
P
DM
0.05
t
1
0.02
0.01
SINGLE PULSE
0.01
10
-5
-4
-3
-2
-1
t
2
1.
R
JA(t)=r(t)*
R
JA
2.
R
JA=See Datasheet
3.
T
JM
-T
A
=P
DM
*
R
JA(t)
4.
Duty Cycle,D=
t
1
/
t
2
10
10
10
1
10
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Aug,01,2011
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51mcu
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