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FC6B22160L

Description
Small Signal Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size3MB,6 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

FC6B22160L Overview

Small Signal Field-Effect Transistor

FC6B22160L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Reach Compliance Codecompliant
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED

FC6B22160L Preview

Doc No.
TT4-EA-14964
Revision.
1
Product Standards
MOS FET
FC6B22160L
FC6B22160L
Gate resistor installed Dual N-channel MOS FET
For lithium-ion secondary battery protection circuits
2.65
6
5
4
Unit: mm
Features
Low source-source ON resistance:Rss(on) typ. = 4.7 m(VGS = 4.5 V)
CSP(Chip Size Package)
RoHS compliant (EU RoHS / MSL:Level 1 compliant)
1
2
3
1.67
φ0.3
0.65
(0.675)
0.65 0.65
(0.51)
Marking Symbol: 36
Packaging
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
1. Source1-1
(FET1)
2. Gate1
(FET1)
3. Source1-2
(FET1)
4. Source2-1
(FET2)
5. Gate2
(FET2)
6. Source2-2
(FET2)
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Source-source Voltage
Gate-source Voltage
Source Current
Total Power Dissipation
Channel Temperature
Storage Temperature Range
Thermal Resistance (ch-a)
Note
Rating
20
8
8
17
80
0.45
2.1
150
-55 to +150
278
59
Unit
V
V
A
A
A
W
W
C
C
C/W
C/W
DC
*1
DC
*2
Pulse
*3
DC
*1
DC
*2
DC
DC
*2
*1
VSS
VGS
IS1
IS2
ISp
PD1
PD2
Tch
Tstg
Rth1
Rth2
Panasonic
JEITA
Code
MLGA006-W-1727-RB
Equivalent circuit
(S2-1), (S2-2)
4, 6
(G2)
5
FET2
FET1
1, 3
(S1-1), (S1-2)
2
(G1)
*1 Mounted on FR4 board ( 25.4 mm
25.4 mm
t1.0 mm )
using the minimum recommended pad size (36m Copper ).
*2 Mounted on Ceramic substrate (70 mm × 70 mm × t1.0 mm).
*3 t = 10
s,
Duty Cycle
1 %
Page 1 of 5
Established : 2014-04-04
Revised
: ####-##-##
0.11
Doc No.
TT4-EA-14964
Revision.
1
Product Standards
MOS FET
FC6B22160L
Electrical Characteristics Ta = 25
C 
3
C
Parameter
Source-source Breakdown Voltage
Zero Gate Voltage Source Current
Gate-source Leakage Current
Gate-source Threshold Voltage
Symbol
VSSS
ISSS
IGSS
Vth
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
RSS(on)5
VF(s-s)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Conditions
IS = 1 mA, VGS = 0 V
VSS = 20 V, VGS = 0 V
VGS =
8
V, VSS = 0 V
VGS =
5
V, VSS = 0 V
IS = 1.1 mA, VSS = 10 V
IS = 4.0 A, VGS = 4.5 V
IS = 4.0 A, VGS = 4.0 V
IS = 4.0 A, VGS = 3.8 V
IS = 4.0 A, VGS = 3.1 V
IS = 4.0 A, VGS = 2.5 V
IF = 4.0 A, VGS = 0 V
VSS = 10 V, VGS = 0 V, f = 1 MHz
VDD = 10 V, VGS = 0 to 4.0 V
IS = 4.0 A
VDD = 10 V, VGS = 4.0 to 0 V
IS = 4.0 A
VDD = 10 V
VGS = 0 to 4.0 V,
IS = 4.0 A
Min
20
Typ
Max
1.0
10
1.0
1.4
6.2
6.4
6.6
8.6
11.8
1.2
Unit
V
A
A
V
Source-source On-state Resistance
0.35
3.5
3.6
3.7
3.9
4
Body Diode Forward Voltage
Input Capacitance
*1
Output Capacitance
*1
Reverse Transfer Capacitance
*1
Turn-on delay Time
*1,*2
Rise Time
*1,*2
Turn-off delay Time
*1,*2
Fall Time
*1,*2
Total Gate Charge
*1
Gate-source Charge
*1
Gate-drain Charge
*1
Note
0.90
4.7
4.8
4.9
5.2
6
0.8
3250
290
250
1.2
2.4
8.1
3.9
35
5
10
m
V
pF
s
s
nC
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Guaranteed by design, not subject to production testing
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Note2:Measurement circuit
VDD = 10 V
IS = 4.0 A
RL = 2.5

Vout
S2
Rg
G2
90 %
Vin
10 %
90 %
90 %
Vin
4V
0V
PW = 10
s
D.C.
1
%
 
G1
Rg
Vout
10 %
10 %
S1
td(on) tr
td(off)
tf
Page 2 of 5
Established : 2014-04-04
Revised
: ####-##-##
Doc No.
TT4-EA-14964
Revision.
1
Product Standards
MOS FET
FC6B22160L
Technical Data ( reference )
IS - VSS
VGS = 4.5 V
RSS(on) - IS
10
Source-source ON-state Resistance
RSS (on) ( m)
12
10
8
6
4
2
※Pulse
measurement
0
0
0.05
0.1
0.15
0.2
0.25
0.3
2.0 V
9
8
7
6
5
4
3
1
※Pulse
measurement
Source Current IS ( A )
3.8 V
3.1 V
2.5 V
2.5 V
3.1 V
3.8 V
VGS = 4.5 V
3
5
7
9
Source-source Voltage VSS (V)
Source Current IS (A)
IS - VGS
10
RSS(on) - VGS
Source-source ON-state Resistance
RSS (on) ( m)
20
18
16
14
12
10
8
6
4
2
0
1
2
3
4
5
Gate-source Voltage VGS ( V )
IS = 4.0 A
25
C
-40
C
Ta = 85
C
※Pulse
measurement
Source Current IS ( A )
Ta = 85
C
1
25
C
0.1
-40
C
※Pulse
measurement
0.01
0.5
1
1.5
2
2.5
Gate-source Voltage VGS ( V )
IF - VF
Gate-source Leakage Current IGS ( A )
100
1.E-02
IGS - VGS
※Pulse
measurement
1.E-04
Ta = 85
C
1.E-06
25
C
Diode Forward Current IF ( A )
※Pulse
measurement
10
Ta = 85
C
1
25
C
0.1
-40
C
1.E-08
-40
C
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.E-10
0
5
10
15
Body Diode Forward Voltage VF ( V )
Gate-source Voltage VGS (V)
Page 3 of 5
Established : 2014-04-04
Revised
: ####-##-##
Doc No.
TT4-EA-14964
Revision.
1
Product Standards
MOS FET
FC6B22160L
Technical Data ( reference )
ISS - VSS
Zero Gate Voltage Source Current ISS ( A )
1.E-03
Dynamic Input/Output Characteristics
Gate - source Voltage VGS ( V )
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
0
5
10
15
20
25
30
25
C
Ta = 85
C
4
3
2
IS = 4.0 A
10 V
8V
VDD = 12 V
1
0
0
10
20
30
40
-40
C
Source-source Voltage VSS ( V )
Gate Charge ( nC )
Rth - tsw
1000
Safe Operating Area
1000
limited by
RSS(on)
(VGS
= 3.8 V)
PW = 10
s
500
s
Thermal Resistance Rth (
C/W
)
Source Current IS ( A )
100
100
10
1 ms
10 ms
10
1
Ta = 25
C,
Mounted on FR4 board
( 25.4 mm
ͯ
25.4 mm
ͯ
t1.0 mm )
using the minimum recommended DC
pad size (36m Copper ).
100 ms
1s
1
Ta = 25
C,
Mounted on FR4 board ( 25.4 mm
ͯ
25.4 mm
ͯ
t1.0 mm )
using the minimum recommended pad size (36m Copper ).
0.1
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width tsw ( s )
Normalized Effective Transient Thermal Impedance
Source-source Voltage VSS ( V )
Thermal Response
10
Ta = 25
C,
Mounted on FR4 board ( 25.4 mm
ͯ
25.4 mm
ͯ
t1.0 mm )
using the minimum recommended pad size (36m Copper ).
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration ( s )
Page 4 of 5
Established : 2014-04-04
Revised
: ####-##-##
Doc No.
TT4-EA-14964
Revision.
1
Product Standards
MOS FET
FC6B22160L
MLGA006-W-1727-RB
2.65
±0.04
6
5
4
Unit: mm
1
2
3
φ0.30
±0.03
(0.675)
0.65 0.65
Land Pattern (Reference) (Unit: mm)
φ0.3
0.65
0.65
0.65
(0.51)
0.65
0.11
-0.02
+0.05
1.67
±0.04
Page 5 of 5
Established : 2014-04-04
Revised
: ####-##-##
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