1N5402 datasheet, PDF - EEWORLD Datasheet

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1N5402: Description3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD; CategoryDiscrete semiconductor diode; File Size253KB，2 Pages; ManufacturerCentral Semiconductor

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1N5402 Overview

3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5402 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	DO-201AD
package instruction	PLASTIC, CASE 103, 2 PIN
Contacts	2
Manufacturer packaging code	CASE 103
Reach Compliance Code	_compli
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
JESD-609 code	e0
Maximum non-repetitive peak forward current	300 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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1N5400 THRU 1N5408

w w w. c e n t r a l s e m i . c o m

SILICON RECTIFIERS

3.0 AMP, 50 THRU 1000 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 1N5400 series

types are axial lead silicon power rectifiers designed for

power supply and general purpose rectifier applications.

MARKING: FULL PART NUMBER

DO-201AD CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL 5400 5401 5402 5403 5404 5405 5406 5407 5408 UNITS

Peak Repetitive Reverse Voltage

VRRM

50 100 200 300 400 500 600 800 1000

DC Blocking Voltage

50 100 200 300 400 500 600 800 1000

RMS Reverse Voltage

Average Forward Current (TA=75°C)

Peak Forward Surge Current (tp=8.3ms) IFSM

Operating and Storage

Junction Temperature

TJ, Tstg

VR(RMS)

140

210

280

3.0

200

-65 to +175

350

420

560

700

°C

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

VR=Rated VRRM

VR=Rated VRRM, TA=100°C

IF=3.0A

MAX

5.0

500

1.2

UNITS

μA

R1 (11-March 2013)

1N5402 Related Products

	1N5402	1N5400	1N5404	1N5401	2SC3169_2014	1N5405	1N5406	1N5407	1N5408
Description	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD	Silicon NPN Power Transistors	3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 600 V, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE, DO-201AD	RECTIFIER DIODE,1KV V(RRM),DO-204AE
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	-	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	-	incompatible	incompatible	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Parts packaging code	DO-201AD	DO-201AD	-	DO-201AD	-	DO-201AD	DO-201AD	DO-201AD	DO-201AD
package instruction	PLASTIC, CASE 103, 2 PIN	O-PALF-W2	O-PALF-W2	PLASTIC, CASE 103, 2 PIN	-	PLASTIC, CASE 103, 2 PIN	PLASTIC, CASE 103, 2 PIN	PLASTIC, CASE 103, 2 PIN	O-PALF-W2
Contacts	2	2	2	2	-	2	2	2	2
Manufacturer packaging code	CASE 103	CASE 103	CASE 103	CASE 103	-	CASE 103	CASE 103	CASE 103	CASE 103
Reach Compliance Code	_compli	_compli	_compli	_compli	-	not_compliant	_compli	_compli	_compli
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V	-	1.2 V	1.2 V	1.2 V	1.2 V
JEDEC-95 code	DO-201AD	DO-201AD	-	DO-201AD	-	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
JESD-609 code	e0	e0	e0	e0	-	e0	e0	e0	e0
Maximum non-repetitive peak forward current	300 A	200 A	200 A	300 A	-	300 A	300 A	200 A	300 A
Number of components	1	1	1	1	-	1	1	1	1
Phase	1	1	1	1	-	1	1	1	1
Number of terminals	2	2	2	2	-	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	-	175 °C	175 °C	175 °C	175 °C
Maximum output current	3 A	3 A	3 A	3 A	-	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	-	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	200 V	50 V	400 V	100 V	-	500 V	600 V	800 V	1000 V
surface mount	NO	NO	NO	NO	-	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	-	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	-	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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