1N5406 datasheet, PDF - EEWORLD Datasheet

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1N5406: Description3 A, 600 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size253KB，2 Pages; ManufacturerCentral Semiconductor

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1N5406 Overview

3 A, 600 V, SILICON, RECTIFIER DIODE

1N5406 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	DO-201AD
package instruction	PLASTIC, CASE 103, 2 PIN
Contacts	2
Manufacturer packaging code	CASE 103
Reach Compliance Code	_compli
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
JESD-609 code	e0
Maximum non-repetitive peak forward current	300 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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1N5400 THRU 1N5408

w w w. c e n t r a l s e m i . c o m

SILICON RECTIFIERS

3.0 AMP, 50 THRU 1000 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 1N5400 series

types are axial lead silicon power rectifiers designed for

power supply and general purpose rectifier applications.

MARKING: FULL PART NUMBER

DO-201AD CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

1N

SYMBOL 5400 5401 5402 5403 5404 5405 5406 5407 5408 UNITS

Peak Repetitive Reverse Voltage

VRRM

50 100 200 300 400 500 600 800 1000

V

DC Blocking Voltage

VR

50 100 200 300 400 500 600 800 1000

V

RMS Reverse Voltage

Average Forward Current (TA=75°C)

Peak Forward Surge Current (tp=8.3ms) IFSM

Operating and Storage

Junction Temperature

TJ, Tstg

VR(RMS)

IO

35

70

140

210

280

3.0

200

-65 to +175

350

420

560

700

V

A

°C

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

IR

VR=Rated VRRM

IR

VF

VR=Rated VRRM, TA=100°C

IF=3.0A

MAX

5.0

500

1.2

UNITS

μA

V

R1 (11-March 2013)

1N5406 Related Products

	1N5406	1N5400	1N5402	1N5404	1N5401	2SC3169_2014	1N5405	1N5407	1N5408
Description	3 A, 600 V, SILICON, RECTIFIER DIODE	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD	Silicon NPN Power Transistors	3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, SILICON, RECTIFIER DIODE, DO-201AD	RECTIFIER DIODE,1KV V(RRM),DO-204AE
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	-	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	-	incompatible	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	-	Central Semiconductor	Central Semiconductor	Central Semiconductor
Parts packaging code	DO-201AD	DO-201AD	DO-201AD	-	DO-201AD	-	DO-201AD	DO-201AD	DO-201AD
package instruction	PLASTIC, CASE 103, 2 PIN	O-PALF-W2	PLASTIC, CASE 103, 2 PIN	O-PALF-W2	PLASTIC, CASE 103, 2 PIN	-	PLASTIC, CASE 103, 2 PIN	PLASTIC, CASE 103, 2 PIN	O-PALF-W2
Contacts	2	2	2	2	2	-	2	2	2
Manufacturer packaging code	CASE 103	CASE 103	CASE 103	CASE 103	CASE 103	-	CASE 103	CASE 103	CASE 103
Reach Compliance Code	_compli	_compli	_compli	_compli	_compli	-	not_compliant	_compli	_compli
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1 V	1 V	1 V	1 V	-	1.2 V	1.2 V	1.2 V
JEDEC-95 code	DO-201AD	DO-201AD	DO-201AD	-	DO-201AD	-	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	-	O-PALF-W2	O-PALF-W2	O-PALF-W2
JESD-609 code	e0	e0	e0	e0	e0	-	e0	e0	e0
Maximum non-repetitive peak forward current	300 A	200 A	300 A	200 A	300 A	-	300 A	200 A	300 A
Number of components	1	1	1	1	1	-	1	1	1
Phase	1	1	1	1	1	-	1	1	1
Number of terminals	2	2	2	2	2	-	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	-	175 °C	175 °C	175 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	-	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	-	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	-	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	600 V	50 V	200 V	400 V	100 V	-	500 V	800 V	1000 V
surface mount	NO	NO	NO	NO	NO	-	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	-	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	-	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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