Direct Attach DA2432™ LEDs
CxxxDA2432-Sxxx00-2
Data Sheet
Cree’s Direct Attach DA2432 LEDs are the next generation of solid-state LED emitters that combine highly efficient
InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value
for the TV-backlighting and general-illumination markets. The DA2432 LEDs are among the brightest in the top-view
market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpad-
down design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance
from improved thermal management. The design is optimally suited for industry-standard top-view packages.
FEATURES
•
Rectangular LED RF Performance
–
–
•
•
•
•
•
•
•
450 & 460 nm – 33 mW min
470 – 30 mW min
APPLICATIONS
•
•
•
Large LCD Backlighting
–
Television
General Illumination
Medium LCD Backlighting
–
–
•
•
Portable PCs
Monitors
High Reliability - Eutectic Attach
Low Forward Voltage (Vf) – 3.1 V Typical at 20 mA
Maximum DC Forward Current – 100 mA
1000-V ESD Threshold Rating
InGaN Junction-Down Design
for Improved Thermal Management
No Wire Bonds Required
Excellent Performance over Temperature
LED Video Displays
White LEDs
CxxxDA2432-Sxxx00-2 Chip Diagram
240 x 320
µm
-
CPR3FM Rev
Data Sheet:
Anode (+)
170 x 60
µm
Gap 60
µm
Thickness
140
µm
Cathode (-)
145 x 105
µm
Side View
Bottom View
1
Top View
Subject to change without notice.
www.cree.com
Maximum Ratings at T
A
= 25°C
Notes 1,3, & 4
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 20 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450DA2432-Sxxx00-2
C460DA2432-Sxxx00-2
C470DA2432-Sxxx00-2
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Bottom Area (μm)
Chip Top Area (μm)
Chip Thickness (μm)
Bond Pad Width – Anode (um)
Bond Pad Length – Anode (um)
Bond Pad Width – Cathode (um)
Bond Pad Length – Cathode (um)
Bond Pad Gap (μm)
Bond Pad Thickness (μm)
2.8
2.8
2.8
Typ.
3.1
3.1
3.1
Max.
3.4
3.4
3.4
Note 3
CxxxDA2432-Sxxx00-2
100 mA
150 mA
150°C
5 V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
21
CxxxDA2432-Sxxx00-2
Dimension
210 x 280
240 x 320
110 x 190
140
60
170
105
145
60
3
Tolerance
±35
±35
±35
±15
±15
±35
±35
±35
±15
±0.5
Notes:
1.
Maximum Forward Current (mA)
Maximum ratings are package-dependent. The above ratings
were determined using a chip sub-mount on MCPCB (with silicone
encapsulation and flux eutectic die attach) for characterization.
Ratings for other packages may differ. Junction temperature should be
characterized in a specific package to determine limitations. Assembly
processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the
HBM is measured by simulating ESD using a rapid avalanche energy
test (RAET). The RAET procedures are designed to approximate the
maximum ESD ratings shown.
All products conform to the listed minimum and maximum
specifications for electrical and optical characteristics when assembled
and operated at 50 mA within the maximum ratings shown above.
Efficiency decreases at higher currents. Typical values given are
within the range of average values expected by manufacturer in large
quantities and are provided for information only. All measurements
are based on a thru-hole package (with Hysol OS4000 encapsulant
and flux eutectic die attach). Optical characteristics are measured in
an integrating sphere using Illuminance E.
160
140
120
100
80
60
40
20
0
50
75
100
125
150
175
2.
3.
Rth
j-a
= 10
Rth
j-a
= 20
Rth
j-a
= 30
Rth
j-a
= 40
C/W
C/W
C/W
C/W
Ambient Temperature (C)
4.
The maximum forward current is determined by the thermal
resistance between the LED junction and ambient. It is crucial for the
end-product to be designed in a manner that minimizes the thermal
resistance from the LED junction to ambient in order to optimize
product performance.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA2432 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3FM Rev -
Standard Bins for CxxxDA2432-Sxxx00-2
LED chips are sorted to the radiant
flux and dominant
wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxDA2432-Sxxxxx-2) orders may be filled with any or all bins (CxxxDA2432-xxxxx-2)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20 mA.
C450DA2432-S3300-2
Radiant Flux (mW)
40
36
C450DA2432-0713-2
C450DA2432-0709-2
C450DA2432-0705-2
C450DA2432-0714-2
C450DA2432-0710-2
C450DA2432-0706-2
C450DA2432-0715-2
C450DA2432-0711-2
C450DA2432-0707-2
C450DA2432-0716-2
C450DA2432-0712-2
C450DA2432-0708-2
33
445
447.5
450
Dominant Wavelength (nm)
452.5
455
Radiant Flux (mW)
C460DA2432-S3300
C460DA2432-0713-2
C460DA2432-0714-2
C460DA2432-0710-2
C460DA2432-0706-2
C460DA2432-0715-2
C460DA2432-0711-2
C460DA2432-0707-2
C460DA2432-0716-2
C460DA2432-0712-2
C460DA2432-0708-2
40
C460DA2432-0709-2
36
C460DA2432-0705-2
33
455
457.5
460
Dominant Wavelength (nm)
462.5
465
C470DA2432-S3000-2
Radiant Flux (mW)
C470DA2432-0713-2
C470DA2432-0714-2
C470DA2432-0710-2
C470DA2432-0706-2
C470DA2432-0702-2
C470DA2432-0715-2
C470DA2432-0711-2
C470DA2432-0707-2
C470DA2432-0703-2
C470DA2432-0716-2
C470DA2432-0712-2
C470DA2432-0708-2
C470DA2432-0704-2
40
C470DA2432-0709-2
36
C470DA2432-0705-2
33
C470DA2432-0701-2
30
465
467.5
470
Dominant Wavelength (nm)
472.5
475
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA2432 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3FM Rev -
Characteristic Curves
These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
Dominant Wavelength Shift (nm)
150
125
100
2
150
1
100
Wavelength Shift
vs. Forward Voltage
Forward Current
vs. Forward Current
If (mA)
If (mA)
75
50
25
0
2
3
4
5
0
-1
-2
50
0
0
0
25
1
50
2
75
Vf (V)
If (mA)
3
100
4
125
150
5
Vf (V)
Relative Intensity vs. Forward Current
Relative Light Intensity
600%
500%
Relative Intensity
100
Relative Intensity vs. Wavelength
80
400%
300%
200%
100%
0%
0
25
50
75
100
125
150
60
40
20
0
350
400
450
500
550
600
If (mA)
Wavelength (nm)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA2432 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3FM Rev -
Radiation Pattern
This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA2432 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3FM Rev -
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