PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
Features
x
1.4 A, 30 V.
R
DS(ON)
= 110 m: @ V
GS
= 10 V
R
DS(ON)
= 160 m: @ V
GS
= 4.5 V
x
Low gate charge
x
Industry standard outline SOT-23 surface mount
package using proprietary SuperSOT
TM
-3 design for
superior thermal and electrical capabilities
x
High performance trench technology for extremely
low R
DS(ON)
D
D
S
G
S
SuperSOT -3
TM
G
T
A
=25 C unless otherwise noted
o
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Parameter
Ratings
30
r
20
(Note 1a)
Units
V
V
A
W
qC
1.4
10
0.5
0.46
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
TJA
R
TJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
qC/W
Package Marking and Ordering Information
Device Marking
361B
Device
FDN361BN
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
www.fairchildsemi.com
2009
Fairchild Semiconductor Corporation
FDN361BN Rev A1(W)
FDN361BN 30V N-Channel, Logic Level, PowerTrench
MOSFET
Electrical Characteristics
Symbol
BV
DSS
'BV
DSS
'T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
I
D
= 250
PA
V
GS
= 0 V,
I
D
= 250
PA,Referenced
to 25qC
V
DS
= 24 V,
V
GS
=
r20
V,
V
GS
= 0 V
V
DS
= 0 V
I
D
= 250
PA
Min
30
Typ
Max Units
V
Off Characteristics
26
1
10
r100
mV/qC
PA
PA
nA
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55qC
On Characteristics
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
1
2.1
92
120
114
3
110
160
150
V
m:
I
D(on)
g
FS
V
GS
= 10 V,
I
D
= 1.4 A
V
GS
= 4.5 V,
I
D
= 1.2 A
V
GS
= 10 V, I
D
= 1.4 A, T
J
= 125qC
V
GS
= 4.5 V,
V
DS
= 5 V
V
DS
= 5 V,
I
D
= 1.4 A
3.5
4
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 15 mV,
V
GS
= 0 V,
145
35
15
193
47
23
pF
pF
pF
:
f = 1.0 MHz
1.6
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
:
3
8
16
2
6
16
29
4
1.8
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 4.5 V
I
D
= 1.4 A,
1.3
0.5
0.5
Drain–Source Diode Characteristics
V
SD
t
rr
Q
rr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
F
= 1.4 A,
I
S
= 0.42 A
(Note 2)
0.8
11
4
1.2
22
V
nS
nC
d
iF
/d
t
= 100 A/µs
Notes:
1.
R
TJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
TJC
is guaranteed by design while R
TCA
is determined by the user's board design.
b) 270°C/W when mounted on a
minimum pad.
a) 250qC/W when mounted on a
0.02 in
2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
d
300
Ps,
Duty Cycle
d
2.0%
FDN361BN Rev A1(W)
www.fairchildsemi.com
FDN361BN 30V N-Channel, Logic Level, PowerTrench
MOSFET
Typical Characteristics
5
V
GS
= 10V
6.0V
I
D
, DRAIN CURRENT (A)
4
2.8
4.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
V
GS
= 3.5V
3
3.5V
2
4.0V
4.5V
5.0V
6.0V
10V
1
3.0V
0
0
0.5
1
1.5
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
1
2
3
4
5
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.25
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 1.4A
V
GS
= 10V
I
D
= 0.7A
0.225
0.2
0.175
T
A
= 125
o
C
0.15
0.125
0.1
0.075
1.4
1.2
1
0.8
T
A
= 25
o
C
3
4
5
6
7
8
9
10
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
5
I
S
, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
4
V
GS
= 0V
1
T
A
= 125
o
C
0.1
3
25
o
C
0.01
2
T
A
= 125
o
C
1
25
o
C
-55
o
C
0
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN361BN Rev A1(W)
www.fairchildsemi.com
FDN361BN 30V N-Channel, Logic Level, PowerTrench
MOSFET
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
=1.4A
V
DS
= 10V
20V
15V
CAPACITANCE (pF)
200
180
160
140
120
100
80
60
40
20
8
C
ISS
f = 1 MHz
V
GS
= 0 V
6
4
C
OSS
C
RSS
0
5
10
15
20
25
30
2
0
0
0.5
1
1.5
2
2.5
3
Q
g
, GATE CHARGE (nC)
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
5
Figure 8. Capacitance Characteristics.
I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
LIMIT
1ms
10ms
100ms
V
GS
= 10V
SINGLE PULSE
R
TJA
= 270
o
C/W
T
A
= 25
o
C
1s
DC
100Ps
4
SINGLE PULSE
R
TJA
= 270°C/W
T
A
= 25°C
3
1
2
0.1
1
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
R
TJA
(t) = r(t) * R
TJA
R
TJA
= 270 C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
TJA
(t)
Duty Cycle, D = t
1
/ t
2
o
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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