EGF30AH THRU EGF30MH
SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 3.0 Amperes
ENTED
PAT
0.150(3.80)
0.130(3.30)
SMB/DO-214AA
FEATURES
0.087(2.20)
0.075(1.90)
0.187(4.75)
0.167(4.24)
* Halogen-free type
* GPRC (Glass Passivated Rectifier Chip) inside
* Glass passivated cavity-free junction
* Ideal for surface mount automotive applications
* Superfast recovery time for high efficiency
* Built-in strain relief
* Easy pick and place
0.016(0.40)
0.006(0.15)
0.096(2.43)
0.079(2.00)
0.055(1.40)
0.039(1.0)
0.236(6.00)
0.197(5.00)
* High temperature soldering guaranteed: 260 C/10 seconds,
at terminals
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
o
MECHANICAL DATA
Case :
JEDEC DO-214AA molded plastic over passivated chip
Terminals :
Tin plated, solderable per MIL-STD-750,
*Dimensions in inches and (millimeters)
TM
Method 2026
Polarity :
Color band denotes cathode end
Weight :
0.004 ounes , 0.12 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature
SYMBOLS
unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (SEE FIG.1)
Peak forward surge current 8.3ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0 A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
T
A
=25 C
o
T
A
=125 C
o
T
A
=150 C
o
o
EGF30
AH
50
35
50
BH
100
70
100
DH
200
140
200
GH
400
280
400
JH
600
420
600
KH
800
560
800
MH
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
V
RRM
V
RMS
V
DC
I
(AV)
3.0
115
1.0
5
50
120
50
75
47
12
-65 to +175
1.25
105
1.7
5
120
-
75
Amps
Volts
V
F
I
R
uA
trr
C
J
R
R
JA
JL
nS
pF
o
C/W
o
T
J
,T
STG
C
NOTES : (1) Reverse recovery test condition : I
F
0.5A, I
R
=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
REV. 0
Zowie Technology Corporation
RATINGS AND CHARACTERISTIC CURVES EGF30AH THRU EGF30MH
FIG.1 - FORWARD CURRENT DERATING CURVE
3.0
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
120
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
RESISTIVE OR
INDUCTIVE LOAD
105
90
75
EGF30JH~EGF30MH
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
2.0
EGF30AH~EGF30GH
60
45
30
15
0
1
10
NUMBER OF CYCLES AT 60Hz
100
1.0
0
0
25
50
75
100
125
150
175
LEAD TEMPERATURE,
o
C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10.00
100
PULSE WIDTH=300uS
1% DUTY CYCLE
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MICROAMPERES
T
J
= 150 C
o
10
T
J
= 125 C
o
1.00
1
0.10
T
J
= 25 C
o
EGF30JH~EGF30MH
EGF30GH
EGF30AH~EGF30DH
0.1
0
1.8
20
40
60
80
100
110
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
JUNCTION CAPACITANCE, pF
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
T
J
= 25 C
o
REV. 0
Zowie Technology Corporation
Microcontroller MCU
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