SD103A, SD103B, SD103C
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
• The SD103 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guardring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• Other applications are click suppression,
efficient full wave bridges in telephone subsets, and
blocking diodes in rechargeable low voltage battery
systems
• These diodes are also available in the SOD-123 and
SOD-323 case with type designations SD103AW(S)-V to
SD103CW(S)-V, and in the MiniMELF case with type
designations LL103A thru LL103C
• For general purpose applications
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
DO-35
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
APPLICATIONS
•
•
•
•
HF-detector
Protection circuit
Small battery charger
AC-DC/DC-DC converters
PARTS TABLE
PART
SD103A
SD103B
SD103C
TYPE
DIFFERENTATION
V
R
= 40 V
V
R
= 30 V
V
R
= 20 V
ORDERING CODE
SD103A-TR or SD103A-TAP
SD103B-TR or SD103B-TAP
SD103C-TR or SD103C-TAP
TYPE MARKING
SD103A
SD103B
SD103C
INTERNAL
CONSTRUCTION
Single diode
Single diode
Single diode
REMARKS
Tape and reel/ammopack
Tape and reel/ammopack
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Peak inverse voltage
Power dissipation (infinite heatsink)
Single cycle surge 60 Hz sine wave
Note
(1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
(1)
TEST CONDITION
PART
SD103A
SD103B
SD103C
SYMBOL
V
R
V
R
V
R
P
tot
I
FSM
VALUE
40
30
20
400
15
UNIT
V
V
V
mW
A
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
(1)
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
VALUE
310
125
- 55 to + 150
UNIT
K/W
°C
°C
Note
(1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Rev. 1.7, 06-May-13
Document Number: 85754
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SD103A, SD103B, SD103C
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
R
= 50 μA
V
R
= 30 V
PART
SD103A
SD103B
SD103C
SD103A
SD103B
SD103C
SYMBOL
V
(BR)
V
(BR)
V
(BR)
I
R
I
R
I
R
V
F
V
F
C
D
t
rr
50
10
MIN.
40
30
20
5
5
5
370
600
TYP.
MAX.
UNIT
V
V
V
μA
μA
μA
mV
mV
pF
ns
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse breakdown voltage
Leakage current
V
R
= 20 V
V
R
= 10 V
I
F
= 20 mA
I
F
= 200 mA
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 50 mA to 200 mA,
recover to 0.1 I
R
Forward voltage drop
Diode capacitance
Reverse recovery time
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
100
10
1
10 000
I
F
- Forward Current (mA)
I
R
- Reverse Current (µA)
1000
100
0.1
0.01
0.001
0 100 200 300 400 500 600 700 800 900 1000
10
1
0
16767
20
40
60
80
100
120
140
160
16765
V
F
- Forward
Voltage
(mV)
T
j
- Junction Temperature (°C)
Fig. 1 -
Forward Current vs. Forward Voltage
Fig. 3 -
Reverse Current vs. Junction Temperature
5
30
f = 1 MHz
C
D
- Diode Capacitance (pF)
I
F
- Forward Current (A)
4
25
20
15
10
5
0
3
2
1
0
0.0
16766
0.5
1.0
1.5
2.0
16768
0
5
10
15
20
25
30
V
F
- Forward
Voltage
(V)
V
R
- Reverse
Voltage
(V)
Fig. 2 -
Forward Current vs. Forward Voltage
Fig. 4 -
Diode Capacitance vs. Reverse Voltage
Rev. 1.7, 06-May-13
Document Number: 85754
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SD103A, SD103B, SD103C
www.vishay.com
Vishay Semiconductors
25
I
tot
- Typ.
Non
Repetitve
Forward Surge Current (A)
20
15
10
5
0
0.1
16769
1.0
10.0
t
P
- Pulse
width
(ms)
Fig. 5 -
Typical Non-Repetitive Forward Surge Current vs.
Pulse Width
PACKAGE DIMENSIONS
in millimeters (inches):
DO-35
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
1.7 [0.067]
26 min. [1.024]
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 1.7, 06-May-13
Document Number: 85754
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1.3 [0.050]
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
Mouser Electronics
Authorized Distributor
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