LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
•
Moisture Sensitivity Level: 1
•
ESD Rating – Human Body Model: >4000 V
•
We declare that the material of product compliance with RoHS requirements.
•
S- Prefix for Automotive and Other Applications Requiring Unique Site
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Collector–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Emitter–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Collector Current – Continuous
IC
VEBO
6.0
6.0
5.0
100
mAdc
VCBO
80
50
30
Vdc
2
EMIT T ER
ESD Rating
– Machine Model: >400 V
LBC846ALT1G
Series
S-LBC846ALT1G
Series
3
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1
Symbol
VCEO
Value
65
45
30
Unit
Vdc
2
SOT–23
Vdc
3
COLLECT OR
1
B ASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 1.)
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 2.)
Junction and Storage
Temperature Range
Symbol
PD
Max
225
Unit
mW
MARKING DIAGRAM
3
xx
1.8
R
qJA
PD
556
300
mW/°C
°C/W
mW
1
2
xx= Device Marking
(See Table Below)
2.4
R
qJA
TJ, Tstg
417
–55 to
+150
mW/°C
°C/W
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.A 1/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series
S-LBC846ALT1G Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
LBC846A,B
(IC = 10 mA)
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
Collector–Emitter Breakdown Voltage
LBC846A,B
(IC = 10
µA,
VEB = 0)
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
Collector–Base Breakdown Voltage
(IC = 10
mA)
Emitter–Base Breakdown Voltage
(IE = 1.0
mA)
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
LBC846A,B
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
LBC846A,B
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
V(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
15
5.0
V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
ICBO
nA
µA
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mA, VCE = 5.0 V)
LBC846A, LBC847A, LBC848A
LBC846B, LBC847B, LBC848B,
LBC849B, LBC850B
LBC847C, LBC848C, LBC849C, LBC850C
VCE(sat)
VBE(sat)
VBE(on)
hFE
110
200
420
–
–
–
–
580
–
180
290
520
–
–
0.7
0.9
660
–
220
450
800
0.25
0.6
–
–
700
770
V
V
mV
–
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage
(IC = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
(VCE = 5.0 Vdc, RS = 2.0 kΩ
f = 1.0 kHz, BW = 200 Hz)
LBC846A,B, LBC847A,B,C, LBC848A,B,C
LBC849B,C, LBC850B,C
fT
Cobo
NF
–
–
–
–
10
4.0
100
–
–
–
–
4.5
MHz
pF
dB
Rev.A 3/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series
S-LBC846ALT1G Series
LBC846A, LBC847A, LBC848A
300
150°C
0.18
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 1 V
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.0001
0.001
0.01
0.1
−55°C
25°C
I
C
/I
B
= 20
150°C
h
FE
, DC CURRENT GAIN
200
25°C
100
−55°C
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
−55°C
25°C
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.0
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
150°C
I
C
/I
B
= 20
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
Rev.A 4/13
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series
S-LBC846ALT1G Series
LBC846A, LBC847A, LBC848A
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
I
C
=
I
C
=
10 mA 20 mA
0.8
I
C
= 50 mA
I
C
= 100 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.4
0
0.02
0.1
1.0
10
20
0.2
I
B
, BASE CURRENT (mA)
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 5. Collector Saturation Region
10
7.0
C, CAPACITANCE (pF)
5.0
C
ib
T
A
= 25°C
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
400
300
200
Figure 6. Base−Emitter Temperature Coefficient
3.0
C
ob
2.0
100
80
60
40
30
20
0.5 0.7
V
CE
= 10 V
T
A
= 25°C
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
40
1.0
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 7. Capacitances
Figure 8. Current−Gain
−
Bandwidth Product
Rev.A 5/13
Embedded System
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