UM2601
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The UM2601 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the small power switching and
load switch applications.
The UM2601 meet the RoHS and Green Product
requirement with full function reliability approved.
Product Summery
BV
DSS
20V
-20V
Applications
R
DS(ON)
18mΩ
50mΩ
ID
7.2A
-4.5A
High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
Networking DC-DC Power System
Load Switch
Dual SOP8 Pin Configuration
Absolute Maximum Ratings
Rating
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
1
Continuous Drain Current, V
GS
@ 4.5V
1
Pulsed Drain Current
2
3
N-Ch
20
±12
7.2
5.8
35
1.5
-55 to 150
-55 to 150
P-Ch
-20
±12
-4.5
-3.6
-23
1.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction-Case
1
1
Typ.
---
---
Max.
85
25
Unit
℃/W
℃/W
1
UM2601
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=4.5V , I
D
=7A
V
GS
=2.5V , I
D
=5A
V
GS
=V
DS
, I
D
=250uA
V
DS
=16V , V
GS
=0V , T
J
=25℃
V
DS
=16V , V
GS
=0V , T
J
=55℃
V
GS
=±12V
, V
DS
=0V
V
DS
=5V , I
D
=7A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=15V , V
GS
=4.5V , I
D
=7A
Min.
20
---
---
---
0.5
---
---
---
---
---
---
---
---
---
---
V
DD
=10V , V
GS
=10V , R
G
=3.3Ω
I
D
=7A
---
---
---
---
V
DS
=15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
0.024
15
20
0.8
-3.58
---
---
---
32.4
1.5
11.4
1.63
2.95
4.8
61
28
8
865
86
72
Max.
---
---
18
25
1.2
---
1
5
±100
---
3
16.0
2.3
4.1
9.6
110
56
16
1211
120
101
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
2,4
2
1,4
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
12.5
4.4
Max.
7.2
35
1.2
---
---
Unit
A
A
V
nS
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
F
=7A , dI/dt=100A/µs , T
J
=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
UM2601
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25℃ , I
D
=-1mA
V
GS
=-4.5V , I
D
=-4A
V
GS
=-2.5V , I
D
=-1.5A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-16V , V
GS
=0V , T
J
=25℃
V
DS
=-16V , V
GS
=0V , T
J
=55℃
V
GS
=±12V
, V
DS
=0V
V
DS
=-5V , I
D
=-4A
V
DS
=-15V , V
GS
=-4.5V , I
D
=-4A
Min.
-20
---
---
---
-0.5
---
---
---
---
---
---
---
---
---
V
DD
=-10V , V
GS
=-4.5V , R
G
=3.3Ω
I
D
=-4A
---
---
---
---
V
DS
=-15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
-0.014
40
58
-0.8
3.95
---
---
---
12
10
1.93
3.18
5.6
47.4
31.6
17.2
857
114
108
Max.
---
---
50
72
-1.2
---
1
5
±100
---
14.0
2.7
4.5
11.2
85
63
34.4
1200
160
151
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
2,4
2
1,4
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25℃
I
F
=-4A , dI/dt=100A/µs , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
19.7
5.2
Max.
-4.5
-23
-1
---
---
Unit
A
A
V
nS
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
3
UM2601
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Typical Characteristics
35
30
32
I
D
=7A
V
GS
=5V
V
GS
=4.5V
28
I
D
Drain Current (A)
25
20
15
10
5
0
0
0.5
V
GS
=3V
V
GS
=2.5V
V
GS
=1.8V
R
DSON
(mΩ)
24
20
16
V
DS
, Drain-to-Source Voltage (V)
1
1.5
2
2.5
3
1
2
V
GS
(V)
3
4
5
Fig.1 Typical Output Characteristics
6
Fig.2 On-Resistance vs. Gate-Source
I
S
Source Current(A)
4
T
J
=150℃
T
J
=25℃
2
0
0
0.3
0.6
0.9
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
1.8
Fig.4 Gate-Charge Characteristics
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
Normalized On Resistance
1.4
Normalized
V
GS(th)
1.0
0.6
0.2
-50
0
50
100
150
T
J
,Junction Temperature (℃ )
T
J
, Junction Temperature (℃)
Fig.5 V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
4
UM2601
N-Ch and P-Ch Fast Switching MOSFETs
1000
100.00
Ciss
100us
10.00
Capacitance (pF)
1ms
10ms
100ms
100
Crss
0.10
o
I
D
(A)
Coss
1.00
10
1
F=1.0MHz
5
9
13
17
21
T
A
=25 C
Single Pulse
0.01
0.01
0.1
DC
V
DS
, Drain to Source Voltage (V)
V
DS
(V)
1
10
100
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJA
)
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
0.01
P
DM
T
ON
T
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
D = T
ON
/T
T
Jpeak
= T
C
+P
DM
XR
θJC
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
5
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