RB160M-90
1.0A Surface Mount Schottky Barrier Diode
Features
·
Small power mold type.(PMDU)
·
Low I
R
·
High reliability
B
C
H
A
Mechanical Data
·
Case: Molded Plastic
M
L
K
SOD-123
Dim
Min
Max
A
0.55 Typ
B
1.40
1.70
C
3.55
3.85
H
2.55
2.85
J
0.00
0.10
K
1.00
1.35
L
0.25
0.40
M
0.10
0.15
0
8°
α
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Param eter
Revers e voltage (repetitive peak)
Revers e voltagec(DC)
Average rectified forward current
Forward current s urge peak
（
60Hz
・
1cyc
）
Junction tem perature
Storage tem perature
Sym bol
V
RM
V
R
Io
I
FSM
Tj
Ts tg
@ T
A
= 25°C unless otherwise specified
Lim its
90
90
1
30
150
-40 to +150
Unit
V
V
A
A
℃
℃
Conditions
Param eter
Forward voltage
Revers e current
Sym bol
V
F
I
R
Min.
-
-
Typ.
-
-
Max.
0.73
100
Unit
V
µA
I
F
=1.0A
V
R
=90V
Mounted on epoxy board. 180
°
Harf s ine wave
1of3
1
Ta=75℃
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
Ta=125℃
0.1
Ta=150℃
Ta=25℃
Ta=-25℃
Ta=150℃
10000
1000
Ta=125℃
1000
条件：f=1MHz
f=1MHz
Ta=75℃
100
10
1
0.1
0.01
Ta=25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
80
90
100
0.01
Ta=-25℃
10
0.001
0
100
200
300
400
500
600
700
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
650
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
Ta=25℃
IF=1A
n=30pcs
100
90
80
70
60
50
40
30
20
10
0
VF DISPERSION MAP
IR DISPERSION MAP
AVE:478.3nA
σ:36.1612nA
200
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
Ta=25℃
VR=90V
VR=100V
n=30pcs
n=30pcs
190
180
170
160
150
140
130
120
110
100
Ct DISPERSION MAP
640
Ta=25℃
f=1MHz
VR=0V
n=10pcs
630
AVE:632.1mV
620
AVE:149.6pF
610
AVE:4.655uA
600
200
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1cyc
8.3ms
100
30
100
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Ifsm
8.3ms 8.3ms
1cyc
50
150
Ifsm
25
20
15
AVE:7.40ns
10
50
AVE:56.0A
0
IFSM DISRESION MAP
5
0
0
1
trr DISPERSION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
150
Ifsm
1000
Mounted on epoxy board
IM=10mA
IF=0.5A
2
Rth(j-a)
t
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
1ms
time
1.5
FORWARD POWER
DISSIPATION:Pf(W)
Rth(j-c)
100
300us
10
1
D=1/2
Sin(θ＝180)
DC
50
1
0.5
0
0.1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
0.001
0.01
0.1
1
10
100
1000
0
0
0.5
1
1.5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2
TIME:t(s)
Rth-t CHARACTERISTICS
2of3
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