Preliminary
Datasheet
RJH60M2DPE
600V - 12A - IGBT
Application: Inverter
Features
Short circuit withstand time (8
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.9 V typ. (at I
C
= 12 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (85 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 45 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 12 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0531EJ0300
Rev.3.00
May 25, 2012
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
C
4
G
1
2
3
E
1. Gate
2. Collector
3. Emitter
4. Collector
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
i
DF
(peak)
Note1
Note2
P
C
j-c
Note2
j-cd
Note2
Tj
Tstg
Ratings
600
±30
25
12
36
12
45
63
1.98
2.8
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0531EJ0300 Rev.3.00
May 25, 2012
Page 1 of 9
RJH60M2DPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Collector to emitter breakdown voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
V
(BR)CES
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
sc
Min
600
—
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
Typ
—
—
—
—
1.9
2.8
430
40
15
33
5
19
32
18
70
45
0.18
0.18
0.36
8
Max
—
5
±1
7
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
s
Test Conditions
Iy = 10
A,
V
GE
= 0
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 12 A, V
GE
= 15 V
Note3
I
C
= 25 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 12 A
V
CC
= 300 V
V
GE
= 15 V
I
C
= 12 A
Rg = 5
Inductive load
Tc = 100
C
V
CC
360 V, V
GE
= 15 V
I
F
= 12 A
Note3
I
F
= 12 A
di
F
/dt = 100 A/s
FRD Forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test.
V
F
t
rr
Q
rr
I
rr
—
—
—
—
1.2
85
0.14
4.2
1.6
—
—
—
V
ns
C
A
R07DS0531EJ0300 Rev.3.00
May 25, 2012
Page 2 of 9
RJH60M2DPE
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
80
30
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
60
Collector Current I
C
(A)
0
25
50
75
100 125 150 175
25
20
15
10
5
0
0
25
50
75
100 125 150 175
40
20
0
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
100
50
Turn-off SOA
PW
Collector Current I
C
(A)
10
0
μ
s
10
Collector Current I
C
(A)
10
=
μ
s
40
30
1
20
0.1
Tc = 25°C
Single pulse
10
0.01
1
0
10
100
1000
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
40
40
Pulse Test
Tj = 25
°
C
18 V 15 V
Typical Output Characteristics
Pulse Test
Tj = 150
°
C
30
18 V
15 V
Collector Current I
C
(A)
30
12 V
20
Collector Current I
C
(A)
20
12 V
10
10 V
10
10 V
V
GE
= 8 V
V
GE
= 8 V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS0531EJ0300 Rev.3.00
May 25, 2012
Page 3 of 9
RJH60M2DPE
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
Tc = 25
°
C
Pulse Test
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 150
°
C
Pulse Test
4
I
C
= 25 A
3
12 A
2
4
3
I
C
= 25 A
2
12 A
1
8
10
12
14
16
18
20
1
8
10
12
14
16
18
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
V
GE
= 15 V
Pulse Test
I
C
= 25A
Typical Transfer Characteristics
40
Collector Current I
C
(A)
Tc = 150°C
30
25°C
4
3
12 A
2
20
10
V
CE
= 10 V
Pulse Test
0
0
4
8
12
16
1
0
−25
0
25
50
75
100 125 150
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
10
Junction Temparature Tj (
°
C)
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Frequency Characteristics (Typical)
8
I
C
= 10 mA
6
1 mA
Collector Current I
C(RMS)
(A)
8
0
Collector current wave
(Square wave)
6
4
4
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
2
0
1
Tj = 125°C, Tc = 90°C
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
duty = 50%
10
100
1000
Junction Temparature Tj (
°
C)
Frequency f (kHz)
R07DS0531EJ0300 Rev.3.00
May 25, 2012
Page 4 of 9
RJH60M2DPE
Switching Characteristics (Typical) (1)
Swithing Energy Losses E (mJ)
1000
Preliminary
Switching Characteristics (Typical) (2)
10
Switching Times t (ns)
100
tf
td(off)
td(on)
1
Eon
Eoff
0.1
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
0.01
1
10
100
10
tr
1
1
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 12 A, Tc = 150
°
C
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
1
Swithing Energy Losses E (mJ)
1000
Switching Times t (ns)
Eon
Eoff
0.1
100
tf
td(off)
td(on)
tr
10
1
10
100
0.01
1
V
CC
= 300 V, V
GE
= 15 V
I
C
= 12 A, Tc = 150
°
C
10
100
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
Switching Characteristics (Typical) (6)
Swithing Energy Losses E (mJ)
1
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 12 A, Rg = 5
Ω
Eoff
Eon
0.1
100
tf
td(off)
td(on)
tr
50
75
100
125
150
V
CC
= 300 V, V
GE
= 15 V
I
C
=12 A, Rg = 5
Ω
0.01
25
50
75
100
125
150
10
25
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS0531EJ0300 Rev.3.00
May 25, 2012
Page 5 of 9
Embedded System
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