2SD601A
Elektronische Bauelemente
0.1A , 60V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
High forward current transfer ratio h
FE
Low collector to emitter saturation voltage V
CE(sat)
A
L
3
SOT-23
3
Top View
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking Code
2SD601A-Q
160~260
ZQ
2SD601A-R
210~340
ZR
2SD601A-S
290~460
ZS
F
K
C B
1
2
2
1
E
D
G
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
J
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
60
50
7
100
200
150, -55~150
Unit
V
V
V
mA
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector to Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE (1)
h
FE (2)
f
T
C
ob
Min.
60
50
7
-
-
-
160
90
-
-
Typ.
-
-
-
-
-
-
-
-
150
3.5
Max.
-
-
-
0.1
100
0.3
460
-
-
-
Unit
V
V
V
µA
µA
V
Test Conditions
I
C
=10µA, I
E
=0
I
C
=2mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=10V, I
C
=0
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=2mA
V
CE
=2V, I
C
=100mA
V
CE
=10V, I
C
=2mA, f=200MHz
V
CB
=10V, I
E
=0, f=1MHz
MHz
pF
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 1 of 1
DSP and ARM Processors
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