SMD Type
P-Channel
MOSFET
AO4453-HF
(KO4453-HF)
MOSFET
SOP-8
■
Features
●
V
DS (V)
=-12V
●
I
D
=-9 A (V
GS
=-4.5V)
●
R
DS(ON)
＜
19mΩ (V
GS
=-4.5V)
●
R
DS(ON)
＜
22mΩ (V
GS
=-3.3V)
●
R
DS(ON)
＜
26mΩ (V
GS
=-2.5V)
●
R
DS(ON)
＜
36mΩ (V
GS
=-1.8V)
●
R
DS(ON)
＜
50mΩ (V
GS
=-1.5V)
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
D
0.21
-0.02
+0.04
1.50
0.15
1
2
3
4
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
G
S
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Junction Storage Temperature Range
L=0.1mH
T
A
=25°C
T
A
=70°C
t
≤
10s
Steady-State
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
R
thJA
R
thJL
T
J
T
stg
Rating
-12
±8
-9
-7
-55
20
20
2.5
1.6
50
85
30
150
-55 to 150
℃
℃/W
mJ
W
A
Unit
V
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1
SMD Type
P-Channel
MOSFET
AO4453-HF
(KO4453-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-12V, V
GS
=0V
V
DS
=-12V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS,
I
D
=-250uA
V
GS
=-4.5V, I
D
=-9A
V
GS
=-4.5V, I
D
=-9A
Static Drain-Source On-Resistance
R
DS(O
n
)
V
GS
=-3.3V, I
D
=-7A
V
GS
=-2.5V, I
D
=-6A
V
GS
=-1.8V, I
D
=-4A
V
GS
=-1.5V, I
D
=-1A
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=-1A,V
GS
=0V
I
F
=-9A, d
I
/d
t
=100A/us
V
GS
=-4.5V, V
DS
=-6V, R
L
=0.67Ω,
R
GEN
=3Ω
V
GS
=-4.5V, V
DS
=-6V, I
D
=-9A
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=-6V, f=1MHz
V
GS
=-4.5V, V
DS
=-5V
V
DS
=-5V, I
D
=-9A
-55
T
J
=125℃
-0.3
Min
-12
MOSFET
Typ
Max
-1
-5
±100
-0.9
19
25
22
26
36
50
Unit
V
uA
nA
V
mΩ
A
33
1370
350
258
10
12.7
1.7
3.4
11
25
70
41.5
20.7
5.2
-3.5
-1
nC
A
V
ns
20
18
nC
Ω
pF
S
Note :The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■
Marking
Marking
4453
KC****
F
2
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SMD Type
P-Channel
MOSFET
AO4453-HF
(KO4453-HF)
■
Typical Characterisitics
35
30
25
-I
D
(A)
20
15
10
5
0
0
1
2
3
V
GS
=-1.5V
0
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
60
Normalized On-Resistance
1.6
V
GS
=-4.5V
I
D
=-9A
V
GS
=-3.3V
I
D
=-7A
1.2
-2.5V
-4.5V
-3V
-2V
-I
D
(A)
20
V
DS
=-5V
MOSFET
15
10
125°C
5
25°C
0
0.5
1
1.5
2
2.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
V
GS
=-2.5V
I
D
=-6A
1.4
R
DS(ON)
(mΩ)
Ω
40
V
GS
=-1.5.V
V
GS
=-1.8V
V
GS
=-2.5V
V
GS
=-1.8V
5
I
D
=-4A
V
GS
=-1.5V
I
D
=-1A
0
25
50
75
100
125
150
175
20
V
GS
=-3.3V
1
V
GS
=-4.5V
0
0
3
6
9
12
15
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
50
40
R
DS(ON)
(mΩ)
Ω
30
20
10
0
25°C
125°C
I
D
=-9A
1.0E+02
1.0E+01
1.0E+00
-I
S
(A)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
125°C
25°C
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
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SMD Type
P-Channel
MOSFET
AO4453-HF
(KO4453-HF)
■
Typical Characterisitics
5
V
DS
=-6V
I
D
=-9A
2400
2000
Capacitance (pF)
1600
1200
800
400
0
C
rss
0
2
4
6
C
oss
C
iss
MOSFET
4
-V
GS
(Volts)
3
2
1
0
0
3
6
9
12
15
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1000
-I
AR
(A) Peak Avalanche Current
100.0
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
10µs
100µs
R
DS(ON)
limited
1ms
10ms
10s
DC
-I
D
(Amps)
100
T
A
=25°C
T
A
=150°C
T
A
=100°C
10.0
1.0
10
T
A
=125°C
1
0.1
T
J(Max)
=150°C
T
A
=25°C
1
10
100
1000
(Note
0.0
0.01
0.1
1
10
100
Time in avalanche, t
A
(µs)
.
µ
Figure 9: Single Pulse Avalanche capability
C)
-V
DS
(Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
T
A
=25°C
1000
Power (W)
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
4
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SMD Type
P-Channel
MOSFET
AO4453-HF
(KO4453-HF)
■
Typical Characterisitics
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=85°C/W
MOSFET
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
Single Pulse
T
on
0.01
0.1
1
10
T
100
1000
0.01
0.001
1E-05
0.0001
0.001
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
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