SMD Type
PNP Transistors
2SA1419-HF
Transistors
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
●
Complementary to 2SC3649-HF
1.70
0.1
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulsed
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
-180
-160
-6
-1.5
-2.5
500
150
-55 to 150
A
mW
℃
V
Unit
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Fall time
Output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
t
on
t
s
t
f
C
ob
f
T
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= -10V, I
E
= -50mA
See Test Circuit.
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA， R
BE
=∞
I
E
= -100μA， I
C
=0
V
CB
= -120 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-500mA, I
B
=- 25mA
I
C
=-500mA, I
B
=- 25mA
V
CE
= -5V, I
C
= -100mA
V
CE
= -5V, I
C
= -10mA
100
80
40
700
40
22
120
pF
MHz
ns
-0.2
-0.85
Min
-180
-160
-6
-1
-1
-0.5
-1.2
400
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SA1419-R-HF
100-200
AER*
F
2SA1419-S-HF
140-280
AES*
F
2SA1419-T-HF
200-400
AET*
F
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