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MMBTA92

Description
500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size373KB,3 Pages
ManufacturerGSME Electronics
WebsiteHttp://www.gsme.com.cn
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MMBTA92 Overview

500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR

MMBTA92 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current0.5000 A
Maximum Collector-Emitter Voltage300 V
Lead-freeYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor25
Rated crossover frequency50 MHz
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBTA92 (销售型號 MMBTA92) GMBTA93(销售型號 MMBTA93)
FEATURES
特點
PNP High Voltage Transistor
MAXIMUM RATINGS
最大額定值
Symbol
符號
V
CEO
V
CBO
V
EBO
Ic
GMBTA92
-300
-300
-6.0
-500
GMBTA93
-200
-200
-6.0
-500
Unit
單½
Vdc
Vdc
Vdc
mAdc
Characteristic
特性參數
Collector-Emitter Voltage
集電極-射極電壓
Collector-Base Voltage
集電極-極電壓
Emitter-Base Voltage
發射極基極電壓
Collector Current-Continuous
集極電流-連續
THERMAL CHARACTERISTICS
熱特性
Characteristic
特性參數
Total Device Dissipation
½耗散功率
FR-5 Board(1)
T
A
=
25℃溫度爲 25℃
Derate above25℃超過 25℃遞減
Total Device Dissipation
½耗散功率
Alumina Substrate
氧化鋁襯底,(2)
T
A
=
25℃溫度爲 25℃
Derate above25℃超過 25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Junction and Storage Temperature
結溫和儲存溫度
DEVICE
Symbol
符號
P
D
Max
最大值
225
1.8
Unit
單½
mW
mW/℃
mW
mW/℃
℃/W
P
D
300
2.4
R
Θ
JA
T
J
,
T
stg
417
150℃, -55to+150℃
MARKING
打標
GMBTA92
(销售型號 MMBTA92)
=2D;GMBTA93
(销售型號 MMBTA93)
=2E
GMBT
BTA92
=2D;GMBT
BTA93

MMBTA92 Related Products

MMBTA92 GMBTA92 GMBTA93 MMBTA93
Description 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3 3 3
Transistor polarity PNP PNP PNP PNP
Maximum collector current 0.5000 A 0.5000 A 0.5000 A 0.5000 A
Maximum Collector-Emitter Voltage 300 V 300 V 300 V 300 V
Lead-free Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape Rectangle Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING
terminal coating MATTE Tin MATTE Tin MATTE Tin MATTE Tin
Terminal location pair pair pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure single single single single
Number of components 1 1 1 1
transistor applications amplifier amplifier amplifier amplifier
Transistor component materials silicon silicon silicon silicon
Transistor type Universal small signal Universal small signal Universal small signal Universal small signal
Minimum DC amplification factor 25 25 25 25
Rated crossover frequency 50 MHz 50 MHz 50 MHz 50 MHz
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