MMBTA93 datasheet, PDF - EEWORLD Datasheet

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MMBTA93: Description500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size373KB，3 Pages; ManufacturerGSME Electronics; WebsiteHttp://www.gsme.com.cn

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MMBTA93 Overview

500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR

MMBTA93 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	0.5000 A
Maximum Collector-Emitter Voltage	300 V
Lead-free	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	amplifier
Transistor component materials	silicon
Transistor type	Universal small signal
Minimum DC amplification factor	25
Rated crossover frequency	50 MHz

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桂林斯壯微電子有限責任公司

Guilin Strong Micro-Electronics Co.,Ltd.

GMBTA92 (销售型號 MMBTA92) GMBTA93(销售型號 MMBTA93)

■

FEATURES

特點

PNP High Voltage Transistor

■

MAXIMUM RATINGS

最大額定值

Symbol

符號

V

CEO

V

CBO

V

EBO

Ic

GMBTA92

-300

-6.0

-500

GMBTA93

-200

-6.0

-500

Unit

單½

Vdc

mAdc

Characteristic

特性參數

Collector-Emitter Voltage

集電極-射極電壓

Collector-Base Voltage

集電極-極電壓

Emitter-Base Voltage

發射極基極電壓

Collector Current-Continuous

集極電流-連續

■

THERMAL CHARACTERISTICS

熱特性

Characteristic

特性參數

Total Device Dissipation

½耗散功率

FR-5 Board(1)

T

A

=

25℃溫度爲 25℃

Derate above25℃超過 25℃遞減

Total Device Dissipation

½耗散功率

Alumina Substrate

氧化鋁襯底,(2)

T

A

=

25℃溫度爲 25℃

Derate above25℃超過 25℃遞減

Thermal Resistance Junction to Ambient

熱阻

Junction and Storage Temperature

結溫和儲存溫度

■

DEVICE

Symbol

符號

P

D

Max

最大值

225

1.8

Unit

單½

mW

mW/℃

mW

mW/℃

℃/W

P

D

300

2.4

R

Θ

JA

T

J

,

T

stg

417

150℃, -55to+150℃

MARKING

打標

GMBTA92

(销售型號 MMBTA92)

=2D;GMBTA93

(销售型號 MMBTA93)

=2E

GMBT

BTA92

=2D;GMBT

BTA93

MMBTA93 Related Products

	MMBTA93	GMBTA92	GMBTA93	MMBTA92
Description	500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR	500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR	500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR	500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals	3	3	3	3
Transistor polarity	PNP	PNP	PNP	PNP
Maximum collector current	0.5000 A	0.5000 A	0.5000 A	0.5000 A
Maximum Collector-Emitter Voltage	300 V	300 V	300 V	300 V
Lead-free	Yes	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
terminal coating	MATTE Tin	MATTE Tin	MATTE Tin	MATTE Tin
Terminal location	pair	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	single	single	single	single
Number of components	1	1	1	1
transistor applications	amplifier	amplifier	amplifier	amplifier
Transistor component materials	silicon	silicon	silicon	silicon
Transistor type	Universal small signal	Universal small signal	Universal small signal	Universal small signal
Minimum DC amplification factor	25	25	25	25
Rated crossover frequency	50 MHz	50 MHz	50 MHz	50 MHz

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