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FCA47N60F_15

Description
N-Channel SuperFET® FRFET® MOSFET
File Size2MB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet View All

FCA47N60F_15 Overview

N-Channel SuperFET® FRFET® MOSFET

FCA47N60F — N-Channel SuperFET
®
FRFET
®
MOSFET
FCA47N60F
May 2014
N-Channel SuperFET
®
FRFET
®
MOSFET
600 V, 47 A, 73 mΩ
Features
• 650 V @ T
J
= 150
°C
• Typ. R
DS(on)
= 62 mΩ
• Fast Recovery Time (Typ. T
rr
= 240 ns)
• Ultra Low Gate Charge (Typ. Q
g
= 210 nC)
• Low Effective Output Capacitance (Typ. C
oss(eff.)
= 420 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
SuperFET
®
MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications. Super-
FET FRFET
®
MOSFET’s optimized body diode reverse recov-
ery performance can remove additional component and
improve system reliability.
Applications
• Solar Inverter
• AC-DC Power Supply
D
G
G
D
S
TO-3PN
S
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate Above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FCA47N60F
600
47
29.7
141
±
30
1800
47
41.7
50
417
3.33
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
1
FCA47N60F
0.3
41.7
Unit
°C/W
°C/W
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FCA47N60F Rev. C2
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