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GBJ603

Description
2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size63KB,2 Pages
ManufacturerGoodwork Semiconductor ( GW )
Websitehttp://www.goodwork.com.tw/
Download Datasheet Parametric Compare View All

GBJ603 Overview

2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ603 Parametric

Parameter NameAttribute value
MakerGoodwork Semiconductor ( GW )
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current170 A
Number of components4
Maximum operating temperature150 °C
Maximum output current2.8 A
Maximum repetitive peak reverse voltage200 V
surface mountNO
GBJ601
THRU
GBJ607
SINGLE PHASE 6.0 AMP BRIDGE RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
6.0 Amperes
GBJ
1.193(30.3)
1.169(29.7)
.134(3.4)
.122(3.1)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.441(11.2)
.425(10.8)
FEATURES
* Ideal for printed circuit board
* Low forward voltage
* Low leakage current
* Mounting position: Any
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
~
~
.165(4.2)
.142(3.6)
.708(18.0)
.669(17.0)
.800(20.3)
.776(19.7)
.189
(4.8)
.402(10.2) .303(7.7) .303(7.7)
SPACING
.386(9.8) .287(7.3) .287(7.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
+
.114(2.9)
.098(2.5)
.031(0.8)
.023(0.6)
Dimensions in inches and (millimeters)
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current at Tc=100 C (Without heatsink)
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage Drop per Bridge Element at 3.0A D.C.
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance R
JC
(Note 2)
Operating Temperature Range, T
J
Storage Temperature Range, T
STG
NOTES:
GBJ601 GBJ602 GBJ603 GBJ604 GBJ605 GBJ606 GBJ607
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
6.0
2.8
170
1.1
5.0
500
55
3.4
-55 +150
-55 +150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
A
V
A
A
PF
C/W
C
C
Ta=100 C
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal Resistance from Junction to Case with device mounted on 75mm x 75mm x 1.6mm Cu Plate Heatsink.
284

GBJ603 Related Products

GBJ603 GBJ601 GBJ602 GBJ606 GBJ604 GBJ605 GBJ607
Description 2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Maker Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) - -
Reach Compliance Code unknow unknow unknow unknow unknow - -
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - -
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - -
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V - -
Maximum non-repetitive peak forward current 170 A 170 A 170 A 170 A 170 A - -
Number of components 4 4 4 4 4 - -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C - -
Maximum output current 2.8 A 2.8 A 2.8 A 2.8 A 2.8 A - -
Maximum repetitive peak reverse voltage 200 V 50 V 100 V 800 V 400 V - -
surface mount NO NO NO NO NO - -
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