GBJ605 datasheet, PDF - EEWORLD Datasheet

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GBJ605: Description2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size63KB，2 Pages; ManufacturerGoodwork Semiconductor ( GW ); Websitehttp://www.goodwork.com.tw/

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GBJ605 Overview

2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

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GBJ601

THRU

GBJ607

SINGLE PHASE 6.0 AMP BRIDGE RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

6.0 Amperes

GBJ

1.193(30.3)

1.169(29.7)

.134(3.4)

.122(3.1)

.189(4.8)

.173(4.4)

.150(3.8)

.134(3.4)

.441(11.2)

.425(10.8)

FEATURES

* Ideal for printed circuit board

* Low forward voltage

* Low leakage current

* Mounting position: Any

.094(2.4)

.078(2.0)

.043(1.1)

.035(0.9)

.165(4.2)

.142(3.6)

.708(18.0)

.669(17.0)

.800(20.3)

.776(19.7)

.189

(4.8)

.402(10.2) .303(7.7) .303(7.7)

SPACING

.386(9.8) .287(7.3) .287(7.3)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

.114(2.9)

.098(2.5)

.031(0.8)

.023(0.6)

Dimensions in inches and (millimeters)

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward (with heatsink Note 2)

Rectified Current at Tc=100 C (Without heatsink)

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage Drop per Bridge Element at 3.0A D.C.

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance R

(Note 2)

Operating Temperature Range, T

Storage Temperature Range, T

STG

NOTES:

GBJ601 GBJ602 GBJ603 GBJ604 GBJ605 GBJ606 GBJ607

UNITS

100

200

140

200

400

280

400

6.0

2.8

170

1.1

5.0

500

3.4

-55 +150

600

420

600

800

560

800

1000

700

1000

C/W

Ta=100 C

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal Resistance from Junction to Case with device mounted on 75mm x 75mm x 1.6mm Cu Plate Heatsink.

284

GBJ605 Related Products

	GBJ605	GBJ601	GBJ602	GBJ603	GBJ606	GBJ604	GBJ607
Description	2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Maker	-	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	-
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknow	-
Configuration	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-
Diode type	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-
Maximum forward voltage (VF)	-	1 V	1 V	1 V	1 V	1 V	-
Maximum non-repetitive peak forward current	-	170 A	170 A	170 A	170 A	170 A	-
Number of components	-	4	4	4	4	4	-
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C	-
Maximum output current	-	2.8 A	2.8 A	2.8 A	2.8 A	2.8 A	-
Maximum repetitive peak reverse voltage	-	50 V	100 V	200 V	800 V	400 V	-
surface mount	-	NO	NO	NO	NO	NO	-

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