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1N5408G

Description
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27
CategoryDiscrete semiconductor    diode   
File Size61KB,2 Pages
ManufacturerGoodwork Semiconductor ( GW )
Websitehttp://www.goodwork.com.tw/
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1N5408G Overview

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27

1N5408G Parametric

Parameter NameAttribute value
MakerGoodwork Semiconductor ( GW )
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current150 A
Number of components1
Maximum operating temperature175 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage1000 V
surface mountNO
1N5400G
THRU
1N5408G
3.0 AMP GLASS PASSIVATED RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Glass passivated junction
3.0 Amperes
DO-27
.220(5.6)
.197(5.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
.375(9.5)
.285(7.2)
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=75 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 3.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance R JA (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
1N
5400G
1N
5401G
1N
5402G
1N
5404G
1N
5406G
1N
5407G
1N
5408G
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
3.0
150
1.1
5.0
50
40
30
-65
+150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
A
A
pF
C/W
C
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.
222

1N5408G Related Products

1N5408G 1N5404G 1N5407G 1N5400G 1N5401G 1N5402G 1N5406G
Description 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE
Maker Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW )
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A 150 A 150 A
Number of components 1 1 1 1 1 1 1
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Maximum repetitive peak reverse voltage 1000 V 400 V 800 V 50 V 100 V 200 V 600 V
surface mount NO NO NO NO NO NO NO
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