1N5400G datasheet, PDF - EEWORLD Datasheet

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1N5400G: Description3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD; CategoryDiscrete semiconductor diode; File Size61KB，2 Pages; ManufacturerGoodwork Semiconductor ( GW ); Websitehttp://www.goodwork.com.tw/

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1N5400G Overview

3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5400G Parametric

Parameter Name	Attribute value
Maker	Goodwork Semiconductor ( GW )
Reach Compliance Code	unknow
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	150 A
Number of components	1
Maximum operating temperature	175 °C
Maximum output current	3 A
Maximum repetitive peak reverse voltage	50 V
surface mount	NO

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1N5400G

THRU

1N5408G

3.0 AMP GLASS PASSIVATED RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

FEATURES

* Low forward voltage drop

* High current capability

* High reliability

* High surge current capability

* Glass passivated junction

3.0 Amperes

DO-27

.220(5.6)

.197(5.0)

DIA.

1.0(25.4)

MIN.

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-0 rate flame retardant

* Lead: Axial leads, solderable per MIL-STD-202,

method 208 guranteed

* Polarity: Color band denotes cathode end

* Mounting position: Any

.375(9.5)

.285(7.2)

.052(1.3)

.048(1.2)

DIA.

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=75 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 3.0A

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance R JA (Note 2)

Operating and Storage Temperature Range T

, T

STG

NOTES:

5400G

5401G

5402G

5404G

5406G

5407G

5408G

UNITS

100

200

140

200

400

280

400

3.0

150

1.1

5.0

-65

+150

600

420

600

800

560

800

1000

700

1000

C/W

1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.

222

1N5400G Related Products

	1N5400G	1N5404G	1N5407G	1N5408G	1N5401G	1N5402G	1N5406G
Description	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 800 V, SILICON, RECTIFIER DIODE	3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	RECTIFIER DIODE
Maker	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
Maximum non-repetitive peak forward current	150 A	150 A	150 A	150 A	150 A	150 A	150 A
Number of components	1	1	1	1	1	1	1
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Maximum repetitive peak reverse voltage	50 V	400 V	800 V	1000 V	100 V	200 V	600 V
surface mount	NO	NO	NO	NO	NO	NO	NO

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