DB102 datasheet, PDF - EEWORLD Datasheet

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DB102: Description1 A, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size59KB，2 Pages; ManufacturerGoodwork Semiconductor ( GW ); Websitehttp://www.goodwork.com.tw/

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DB102 Overview

1 A, SILICON, BRIDGE RECTIFIER DIODE

DB102 Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknow
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	50 A
Number of components	4
Maximum operating temperature	125 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	100 V
surface mount	NO
Base Number Matches	1

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DB101

THRU

DB107

SINGLE PHASE 1.0 AMP BRIDGE RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

1.0 Ampere

DB-1

.335(8.5)

.307(7.8)

FEATURES

* Ideal for printed circuit board

* Reliable low cost construction utilizing molded

plastic technique

* High surge current capability

* Polarity: marked on body

* Mounting position: Any

.255(6.5)

.245(6.2)

.350(8.9)

.311(7.9)

.346(8.8)

.323(8.2)

.134(3.4)

.124(3.1)

.020

(0.5)

.102(2.6)

.095(2.4)

.012(0.3)

.008(0.2)

.193(4.9)

.165(4.2)

.205(5.2)

.195(5.0)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

at Ta=40 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage Drop per Bridge Element at 1.0A D.C.

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Operating Temperature Range, T

Storage Temperature Range, T

STG

Ta=125 C

DB101 DB102 DB103 DB104 DB105 DB106 DB107 UNITS

100

200

140

200

400

280

400

1.0

1.1

500

-65 +125

-65 +150

600

420

600

800

560

800

1000

700

1000

244

DB102 Related Products

	DB102	DB101	DB104	DB106	DB107	DB103	DB105
Description	1 A, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, SILICON, BRIDGE RECTIFIER DIODE	1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, SILICON, BRIDGE RECTIFIER DIODE	1 A, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code	unknow	unknow	unknow	unknow	unknown	unknown	unknow
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A	50 A	50 A	50 A
Number of components	4	4	4	4	4	4	4
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Maximum repetitive peak reverse voltage	100 V	50 V	400 V	800 V	1000 V	200 V	600 V
surface mount	NO	NO	NO	NO	NO	NO	NO
Maker	-	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )

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