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FR6G02

Description
Silicon Fast Recovery Diode
CategoryDiscrete semiconductor    diode   
File Size754KB,3 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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FR6G02 Overview

Silicon Fast Recovery Diode

FR6G02 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerGeneSiC
package instructionO-MUPM-D1
Reach Compliance Codecompli
applicationFAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JEDEC-95 codeDO-203AA
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current135 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current6 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage400 V
Maximum reverse current25 µA
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
FR6A02 thru FR6JR02
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 600 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
DO-4 Package
V
RRM
= 50 V - 600 V
I
F
= 6 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FR6A(R)02 FR6B(R)02 FR6D(R)02 FR6G(R)02 FR6J(R)02 Unit
50
35
50
6
135
-55 to 150
-55 to 150
100
70
100
6
135
-55 to 150
-55 to 150
200
140
200
6
135
-55 to 150
-55 to 150
400
280
400
6
135
-55 to 150
-55 to 150
600
420
600
6
135
-55 to 150
-55 to 150
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 6 A, T
j
= 25 °C
V
R
= 50 V, T
j
= 25 °C
V
R
= 50 V, T
j
= 150 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
FR6A(R)02 FR6B(R)02 FR6D(R)02 FR6G(R)02 FR6J(R)02 Unit
1.4
25
6
1.4
25
6
1.4
25
6
1.4
25
6
1.4
25
6
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
200
200
200
200
250
nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
2.5
2.5
2.5
2.5
2.5
°C/W
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1

FR6G02 Related Products

FR6G02 FR6D02
Description Silicon Fast Recovery Diode Silicon Fast Recovery Diode
Is it lead-free? Lead free Lead free
Maker GeneSiC GeneSiC
package instruction O-MUPM-D1 O-MUPM-D1
Reach Compliance Code compli compli
application FAST RECOVERY FAST RECOVERY
Shell connection CATHODE CATHODE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.4 V 1.4 V
JEDEC-95 code DO-203AA DO-203AA
JESD-30 code O-MUPM-D1 O-MUPM-D1
Maximum non-repetitive peak forward current 135 A 135 A
Number of components 1 1
Phase 1 1
Number of terminals 1 1
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 6 A 6 A
Package body material METAL METAL
Package shape ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT
Maximum repetitive peak reverse voltage 400 V 200 V
Maximum reverse current 25 µA 25 µA
Maximum reverse recovery time 0.2 µs 0.2 µs
surface mount NO NO
Terminal form SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER
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