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1N5399S-G

Description
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size137KB,3 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

1N5399S-G Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2

1N5399S-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-PALF-W2
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

SENSITRON

SEMICONDUCTOR
Data Sheet 2579, Rev. —

Features



1N5391S –

1N5399S

1.5A SILICON RECTIFIER


Diffused Junction

Fast Switching for High Efficiency
                                                     

High Current Capability and Low Forward Voltage Drop

Low Reverse Leakage Current

Surge Overload Rating to 50 A Peak
Mechanical Data


Plastic Material – UL Flammability Classification Rating 94V-0
                                                          
DO-41
Max
                                                                



Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band
Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.


Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 70°C
B
B

Weight: 0.30 grams (approx.)

Mounting Position: Any

Marking: Type Number

Dim
A
B
C
D
Min
Min
Max
25.4
4.06 5.21
0.71 0.864
2.00 2.72
In mm
1.000
0.159 0.205
0.028 0.034
0.079 0.107
In inch
@T
A
=25°C unless otherwise specified
B
B
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
1N
5391S
50
35
1N
1N
1N
1N
1N
1N
5392S 5393S 5395S 5397S 5398S 5399S
100
70
200
140
400
280
1.5
600
420
800
560
1000
700
Unit
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 1.5A
B
B
I
FSM
V
FM
I
RM
C
j
R
θJA
T
j
T
STG
50
1.1
5.0
50
20
55
-65 to +150
-65 to +150
A
V
µA
pF
K/W
°C
°C
@T
A
= 25°C
@T
A
= 100°C
B
B
B
B
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

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