ZTX1055A
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ZTX1055A
180
1.0
D=1(D.C)
160
t1
140
Am
120
tp
D=t1
0.75
tp
C
B
E
t
en
bi
100
D=0.5
m
te
0.50
ISSUE 3 JANUARY 1995
FEATURES
* V
CEO
=120V
* 3 Amp continuous Current
* 6 Amp pulse Current
* Very Low Saturation Voltage
APPLICATIONS
* Automotive Switching Circuit
* Audio Driver Stages
80
D=0.2
e
ur
at
r
pe
60
D=0.1
E-Line
TO92 Compatible
D=0.05
40
0.25
20
Single Pulse
ABSOLUTE MAXIMUM RATINGS.
-40
0
40
80
120
160
200
Max Power Dissipation - (Watts)
0
0.1ms
1ms
10ms
100ms
1s
10s
100s
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
SYMBOL
VALUE
175
120
5
6
3
500
1
UNIT
V
V
V
A
A
mA
W
Pulse Width
T -Temperature
(°C)
Transient Thermal Resistance
Derating curve
SPICE PARAMETERS
*ZETEX ZTX1055A Spice model Last revision 25/1/95
*
.MODEL ZTX1055A NPN IS=1.60E-12 NF=1.0 BF=500 IKF=4.0 VAF=120
+
ISE=4.0E-13 NE=1.4 NR=1.0 BR=80 IKR=2.5 VAR=15
+
+
ISC=5.0E-10 NC=1.7 RB=0.1 RE=0.040 RC=0.030
CJC=63.3E-12 CJE=512.6E-12 MJC=0.439 MJE=0.373
T
j
:T
stg
-55 to +200
°C
+
VJC=0.511 VJE=0.800 TF=700E-12 TR=110E-9
*
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
©
1995 ZETEX PLC
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1995
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
87 Modular Avenue
Commack NY11725
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road, Kwai Fong
Telephone:(852) 26100 611
Fax: (852) 24250 494
©
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
ZTX1055A
TYPICAL CHARACTERISTICS
0.8
+25°C
0.6
I
+
/I
*
=20
I
+
/I
*
=30
I
+
/I
*
=50
0.4
0.2
I
+
/I
*
=20
0.6
0.4
0.8
-55°C
+25°C
+100°C
+175°C
ZTX1055A
MAX.
V
I
C
=100µA
IC=100µA
IC=10mA
0.2
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT
CONDITIONS.
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base
Breakdown Voltage
V
V
V
IC=100µA, V
EB
=1V
1mA
10mA
10A
100mA
1A
1mA
10mA
V
(BR)CBO
175
280
Collector-Emitter
Breakdown Voltage
V
CES
175
280
Collector-Emitter
Breakdown Voltage
V
CEO
120
150
Collector-Emitter
Breakdown Voltage
V
I
E
=100µA
I
C
-Collector Current
V
CB
=130V
V
EB
=4V
VCES=130V
600
400
-55°C
+100°C
+25°C
V
CEV
175
280
100mA
1A
10A
Emitter-Base Breakdown V
(BR)EBO
Voltage
10
10
10
nA
V
+-
=10V
5
nA
nA
8.8
I
C
-Collector Current
Collector Cut-Off Current
I
CBO
0.3
V
CE(sat)
v I
C
V
CE(sat)
v I
C
Emitter Cut-Off Current
I
EBO
0.3
Collector Emitter Cut-Off
Current
50
160
310
1000
900
mV
IC=3A, V
CE
=10V*
1mA
I
CES
0.3
1.0
I
+
/I
*
=20
0.8
-55°C
0.6
+25°C
0.4
+100°C
0.2
+175°C
Collector-Emitter
Saturation Voltage
mV
I
C
=3A, I
B
=150mA*
200
V
CE(sat)
22
120
220
mV
mV
mV
I
C
=0.1A, I
B
=5mA*
I
C
=1A, I
B
=20mA*
I
C
=3A, I
B
=150mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
950
Base-Emitter Turn-On
Voltage
1200
I
C
=10mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
I
C
=6A, V
CE
=10V*
MHz
30
ns
ns
I
C
=1A, I
B
=±10mA,
V
CC
=50V
pF
V
CB
=10V, f=1MHz
I
C
=1A, I
B
=10mA, V
CC
=50V
I
C
=50mA, V
CE
=10V
f=100MHz
V
BE(on)
810
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
10A
I
C
-Collector Current
I
C
-Collector Current
Static Forward Current
Transfer Ratio
h
FE
275
300
50
400
450
110
15
h
FE
v I
C
V
BE(sat)
v Ic
Transition Frequency
f
T
130
1.0
0.8
0.6
0.4
0.2
V
+-
=10V
-55°C
+25°C
+100°C
+175°C
10
Single Pulse Test Tamb=25C
Output Capacitance
C
obo
17
1
Switching Times
t
on
90
t
off
2400
0.1
DC
1s
100ms
10ms
1ms
100us
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
1mA
10mA
100mA
1A
10A
0.01
0.1V
1V
10V
100V
I
C
-Collector Current
V
CE
- Collector Voltage
V
BE(on)
v I
C
Safe Operating Area
ZTX1055A
TYPICAL CHARACTERISTICS
0.8
+25°C
0.6
I
+
/I
*
=20
I
+
/I
*
=30
I
+
/I
*
=50
0.4
0.2
I
+
/I
*
=20
0.6
0.4
0.8
-55°C
+25°C
+100°C
+175°C
ZTX1055A
MAX.
V
I
C
=100µA
IC=100µA
IC=10mA
0.2
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT
CONDITIONS.
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base
Breakdown Voltage
V
V
V
IC=100µA, V
EB
=1V
1mA
10mA
10A
100mA
1A
1mA
10mA
V
(BR)CBO
175
280
Collector-Emitter
Breakdown Voltage
V
CES
175
280
Collector-Emitter
Breakdown Voltage
V
CEO
120
150
Collector-Emitter
Breakdown Voltage
V
I
E
=100µA
I
C
-Collector Current
V
CB
=130V
V
EB
=4V
VCES=130V
600
400
-55°C
+100°C
+25°C
V
CEV
175
280
100mA
1A
10A
Emitter-Base Breakdown V
(BR)EBO
Voltage
10
10
10
nA
V
+-
=10V
5
nA
nA
8.8
I
C
-Collector Current
Collector Cut-Off Current
I
CBO
0.3
V
CE(sat)
v I
C
V
CE(sat)
v I
C
Emitter Cut-Off Current
I
EBO
0.3
Collector Emitter Cut-Off
Current
50
160
310
1000
900
mV
IC=3A, V
CE
=10V*
1mA
I
CES
0.3
1.0
I
+
/I
*
=20
0.8
-55°C
0.6
+25°C
0.4
+100°C
0.2
+175°C
Collector-Emitter
Saturation Voltage
mV
I
C
=3A, I
B
=150mA*
200
V
CE(sat)
22
120
220
mV
mV
mV
I
C
=0.1A, I
B
=5mA*
I
C
=1A, I
B
=20mA*
I
C
=3A, I
B
=150mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
950
Base-Emitter Turn-On
Voltage
1200
I
C
=10mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
I
C
=6A, V
CE
=10V*
MHz
30
ns
ns
I
C
=1A, I
B
=±10mA,
V
CC
=50V
pF
V
CB
=10V, f=1MHz
I
C
=1A, I
B
=10mA, V
CC
=50V
I
C
=50mA, V
CE
=10V
f=100MHz
V
BE(on)
810
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
10A
I
C
-Collector Current
I
C
-Collector Current
Static Forward Current
Transfer Ratio
h
FE
275
300
50
400
450
110
15
h
FE
v I
C
V
BE(sat)
v Ic
Transition Frequency
f
T
130
1.0
0.8
0.6
0.4
0.2
V
+-
=10V
-55°C
+25°C
+100°C
+175°C
10
Single Pulse Test Tamb=25C
Output Capacitance
C
obo
17
1
Switching Times
t
on
90
t
off
2400
0.1
DC
1s
100ms
10ms
1ms
100us
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
1mA
10mA
100mA
1A
10A
0.01
0.1V
1V
10V
100V
I
C
-Collector Current
V
CE
- Collector Voltage
V
BE(on)
v I
C
Safe Operating Area
ZTX1055A
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ZTX1055A
180
1.0
D=1(D.C)
160
t1
140
Am
120
tp
D=t1
0.75
tp
C
B
E
t
en
bi
100
D=0.5
m
te
0.50
ISSUE 3 JANUARY 1995
FEATURES
* V
CEO
=120V
* 3 Amp continuous Current
* 6 Amp pulse Current
* Very Low Saturation Voltage
APPLICATIONS
* Automotive Switching Circuit
* Audio Driver Stages
80
D=0.2
e
ur
at
r
pe
60
D=0.1
E-Line
TO92 Compatible
D=0.05
40
0.25
20
Single Pulse
ABSOLUTE MAXIMUM RATINGS.
-40
0
40
80
120
160
200
Max Power Dissipation - (Watts)
0
0.1ms
1ms
10ms
100ms
1s
10s
100s
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
SYMBOL
VALUE
175
120
5
6
3
500
1
UNIT
V
V
V
A
A
mA
W
Pulse Width
T -Temperature
(°C)
Transient Thermal Resistance
Derating curve
SPICE PARAMETERS
*ZETEX ZTX1055A Spice model Last revision 25/1/95
*
.MODEL ZTX1055A NPN IS=1.60E-12 NF=1.0 BF=500 IKF=4.0 VAF=120
+
ISE=4.0E-13 NE=1.4 NR=1.0 BR=80 IKR=2.5 VAR=15
+
+
ISC=5.0E-10 NC=1.7 RB=0.1 RE=0.040 RC=0.030
CJC=63.3E-12 CJE=512.6E-12 MJC=0.439 MJE=0.373
T
j
:T
stg
-55 to +200
°C
+
VJC=0.511 VJE=0.800 TF=700E-12 TR=110E-9
*
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
©
1995 ZETEX PLC
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1995
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
87 Modular Avenue
Commack NY11725
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road, Kwai Fong
Telephone:(852) 26100 611
Fax: (852) 24250 494
©
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
Power technology
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