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SSFD6035

Description
High Power and current handing capability
File Size294KB,7 Pages
ManufacturerSILIKRON
Websitehttp://www.silikron.com
Download Datasheet View All

SSFD6035 Overview

High Power and current handing capability

SSFD6035
DESCRIPTION
The SSFD6035 uses advanced trench
technology to provide excellent R
DS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
G
D
S
Schematic diagram
GENERAL FEATURES
V
DS
=- 60V,I
D
=-26A
R
DS(ON)
< 40mΩ @ V
GS
=-10V
R
DS(ON)
< 55mΩ @ V
GS
=-4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
Application
●PWM
applications
●Load
switch
●Power
management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
SSFD6035
Device
SSFD6035
Device Package
DPAK
Reel Size
-
Tape width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Limit
-60
±20
-26
-20
-60
60
-55 To 175
Unit
V
V
A
A
A
W
V
DS
V
GS
I
D
(25
)
I
D
(70
)
I
DM
P
D
T
J
,T
STG
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
25
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=-250μA
Min
-60
Typ
Max
Unit
V
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
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