March 2002
AO4406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device makes an excellent high side switch for
notebook CPU core DC-DC conversion.
Features
V
DS
(V) = 30V
I
D
= 11.5A
R
DS(ON)
< 14mΩ (V
GS
= 10V)
R
DS(ON)
< 16.5mΩ (V
GS
= 4.5V)
R
DS(ON)
< 26mΩ (V
GS
= 2.5V)
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
A
Current
Pulsed Drain Current
Avalanche Current
B
B,E
B,E
Maximum
30
±12
11.5
9.6
80
25
78
3
2.1
-55 to 150
Units
V
V
A
A
mJ
W
°C
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AV
L=0.1mH
E
AV
P
D
T
J
, T
STG
T
A
=25°C
Repetitive Avalanche Energy
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
23
48
12
Max
40
65
16
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4406
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=12A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=4.5V, I
D
=10A
V
GS
=2.5V, I
D
=8A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=5V, I
D
=10A
25
I
S
=10A,V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
0.8
60
11.5
16
13.5
19.5
38
0.83
1
4.5
1630
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
201
142
0.8
18
V
GS
=4.5V, V
DS
=15V, I
D
=11.5A
2.5
5.5
4
V
GS
=10V, V
DS
=15V, R
L
=1.2Ω,
R
GEN
=3Ω
I
F
=10A, dI/dt=100A/µs
5
32
5
18,7
19.8
14
19.2
16.5
26
1
Min
30
1
5
100
1.5
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=10A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
10V
40
30
I
D
(A)
I
D
(A)
20
10
V
GS
=1.5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
30
Normalized On-Resistance
25
V
GS
=2.5V
R
DS(ON)
(m
Ω
)
20
15
10
5
0
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
40
I
D
=10A
30
1.0E-01
R
DS(ON)
(m
Ω
)
I
S
(A)
125°C
20
25°C
10
1.0E-02
1.0E-03
1.0E-04
1.0E-05
2.00
0.0
0.4
V
0.6
0.8
1.0
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.2
1.2
25°C
1.0E+01
V
GS
=0V
1.0E+00
125°C
V
GS
=4.5V
1.8
I
D
=10A
1.6
V
GS
=4.5V
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=2.5V
V
GS
=10V
4.5V
3V
2.5V
30
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
125°C
25°C
V
DS
=5V
2V
V
GS
=10V
0
0.00
4.00
6.00
8.00
10.00
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
0
0
4
8
12
16
20
24
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=11.5A
Capacitance (pF)
2500
2250
2000
1750
1500
1250
1000
750
500
250
0
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
C
rss
C
iss
100.0
R
DS(ON)
limited
10.0
I
D
(Amps)
1ms
100µs
Power (W)
10ms
0.1s
1s
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
10s
50
40
30
20
10
DC
0
0.001
0.01
0.1
1
10
100
1000
T
J(Max)
=150°C
T
A
=25°C
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.01
0.00001
P
D
T
on
T
10
100
1000
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
I
D
(A), Peak Avalanche Current
60
50
40
30
20
10
0
0.00001
T
A
=25°C
4
t
A
=
L
⋅
I
D
BV
−
V
DD
Power Dissipation (W)
3
2
10s
1
Steady-
State
0.0001
Time in avalanche, t
A
(s)
Figure 12: Avalanche capability
0.001
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 13: Power De-rating (Note A)
Alpha & Omega Semiconductor, Ltd.
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