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THMD25N11B75

Description
IC 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184, Dynamic RAM
Categorystorage    storage   
File Size940KB,17 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

THMD25N11B75 Overview

IC 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184, Dynamic RAM

THMD25N11B75 Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionDIMM, DIMM184
Reach Compliance Codeunknown
ECCN codeEAR99
access modeSINGLE BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N184
memory density2147483648 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals184
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL

THMD25N11B75 Related Products

THMD25N11B75 THMD25N11B70
Description IC 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184, Dynamic RAM IC 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184, Dynamic RAM
Maker Toshiba Semiconductor Toshiba Semiconductor
package instruction DIMM, DIMM184 DIMM, DIMM184
Reach Compliance Code unknown unknown
access mode SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST
Maximum access time 0.75 ns 0.75 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 133 MHz 143 MHz
I/O type COMMON COMMON
JESD-30 code R-XDMA-N184 R-XDMA-N184
memory density 2147483648 bit 2147483648 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
memory width 64 64
Number of functions 1 1
Number of ports 1 1
Number of terminals 184 184
word count 33554432 words 33554432 words
character code 32000000 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 32MX64 32MX64
Output characteristics 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM
Encapsulate equivalent code DIMM184 DIMM184
Package shape RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 2.5 V 2.5 V
Certification status Not Qualified Not Qualified
refresh cycle 8192 8192
self refresh YES YES
Maximum supply voltage (Vsup) 2.7 V 2.7 V
Minimum supply voltage (Vsup) 2.3 V 2.3 V
Nominal supply voltage (Vsup) 2.5 V 2.5 V
surface mount NO NO
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm
Terminal location DUAL DUAL
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