ITS25F12P datasheet, PDF - EEWORLD Datasheet

ITS25F12P: DescriptionInsulated Gate Bipolar Transistor, 37A I(C), 1200V V(BR)CES, N-Channel,; CategoryDiscrete semiconductor The transistor; File Size373KB，8 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/

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ITS25F12P Overview

Insulated Gate Bipolar Transistor, 37A I(C), 1200V V(BR)CES, N-Channel,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Dynex
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	37 A
Collector-emitter maximum voltage	1200 V
Gate emitter threshold voltage maximum	7.5 V
Gate-emitter maximum voltage	20 V
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	100 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

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