DB102GC1 datasheet, PDF - EEWORLD Datasheet

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DB102GC1: DescriptionBridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, PLASTIC, DB, 4 PIN; CategoryDiscrete semiconductor diode; File Size124KB，2 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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DB102GC1 Overview

Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, PLASTIC, DB, 4 PIN

DB102GC1 Parametric

Parameter Name	Attribute value
Maker	Taiwan Semiconductor
package instruction	R-PDIP-T4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	100 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PDIP-T4
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Maximum repetitive peak reverse voltage	100 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL

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DB101G

THRU

DB107G

Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers

Voltage Range

50 to 1000 Volts

Current

1.0 Ampere

Features

a

UL Recognized File # E-96005

Ideal for printed circuit board

Reliable low cost construction utilizing

molded plastic technique

High temperature soldering guaranteed:

250°C / 10 seconds / 0.375” ( 9.5mm )

lead length at 5 lbs., ( 2.3 kg ) tension

Small size, simple installation

Leads solderable per MIL-STD-202,

Method 208

High surge current capability

DB

DBS

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

@T

A

= 40°C

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated Load

(JEDEC method )

Maximum Instantaneous Forward Voltage

@ 1.0A

Maximum DC Reverse Current @ T

A

=25°C

at Rated DC Blocking Voltage @ T

A

=125°C

Operating Temperature Range T

J

Storage Temperature Range T

STG

DB101G DB102G DB103G DB104G DB105G DB106G DB107G

DBS

101G

102G

103G

104G

105G

106G

107G

50

35

50

100

70

100

200

140

200

400

280

400

1.0

50

1.1

600

420

600

800

560

800

Units

1000

V

700

V

1000

V

A

V

uA

°C

10

500

-55 to +150

Note: DBS for Surface Mount Package.

- 470 -

DB102GC1 Related Products

	DB102GC1	DB106GC1	DBS101GRD	DB101GC1	DB104GC1	DBS102GRD	DBS106GRD
Description	Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, PLASTIC, DB, 4 PIN	Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon, PLASTIC, DB, 4 PIN	Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, PLASTIC, DBS, 4 PIN	Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, PLASTIC, DB, 4 PIN	Bridge Rectifier Diode, 1 Phase, 1A, 400V V(RRM), Silicon, PLASTIC, DB, 4 PIN	Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, PLASTIC, DBS, 4 PIN	Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon, PLASTIC, DBS, 4 PIN
Maker	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
package instruction	R-PDIP-T4	R-PDIP-T4	R-PDSO-G4	R-PDIP-T4	R-PDIP-T4	R-PDSO-G4	R-PDSO-G4
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	100 V	800 V	50 V	50 V	400 V	100 V	800 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PDIP-T4	R-PDIP-T4	R-PDSO-G4	R-PDIP-T4	R-PDIP-T4	R-PDSO-G4	R-PDSO-G4
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A	50 A	50 A	50 A
Number of components	4	4	4	4	4	4	4
Phase	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
Maximum repetitive peak reverse voltage	100 V	800 V	50 V	50 V	400 V	100 V	800 V
surface mount	NO	NO	YES	NO	NO	YES	YES
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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