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LL4006G-J0L0G

Description
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, MELF-2
CategoryDiscrete semiconductor    diode   
File Size203KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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LL4006G-J0L0G Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, MELF-2

LL4006G-J0L0G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionO-PELF-R2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PELF-R2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage800 V
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
LL4001G thru LL4007G
Taiwan Semiconductor
Small Signal Product
CREAT BY ART
Surface Mount Glass Plassivated Silicon Rectifiers
FEATURES
- Plastic package has carries underwriters
- Ideal for automated placement
- Surge overload rating to 30 Ampers peak
- Reliable low cost construction utilizing molded
plastic technique results in in-expensive product
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MELF
MECHANICAL DATA
Case:
MELF
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Mounting position:
Any
Weight:
0.12 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θJC
T
J
T
STG
LL40
01G
50
35
50
LL40
02G
100
70
100
LL40
03G
200
140
200
LL40
04G
400
280
400
1
30
1.1
5
100
15
50
- 65 to +150
- 65 to +150
O
LL40
05G
600
420
600
LL40
06G
800
560
800
LL40
07G
1000
700
1000
UNIT
V
V
V
A
A
V
μA
pF
C/W
O
O
C
C
Document Number: DS_S1407007
Version: C14

LL4006G-J0L0G Related Products

LL4006G-J0L0G LL4001G-J0L0G LL4002G-J0L0G LL4004G-J0L0G LL4003G-J0L0G LL4007G-J0L0G LL4005G-J0L0G
Description Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, MELF-2 Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, MELF-2 Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, MELF-2 Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, MELF-2 Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, MELF-2 Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, MELF-2 Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, MELF-2
package instruction O-PELF-R2 MELF-2 MELF-2 MELF-2 O-PELF-R2 MELF-2 O-PELF-R2
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-PELF-R2 O-PELF-R2 O-PELF-R2 O-PELF-R2 O-PELF-R2 O-PELF-R2 O-PELF-R2
Number of components 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 800 V 50 V 100 V 400 V 200 V 1000 V 600 V
surface mount YES YES YES YES YES YES YES
Terminal form WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND
Terminal location END END END END END END END
Maker Taiwan Semiconductor - - - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor

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