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Datasheet> All Categories > Discrete semiconductor> diode> 1N6639E3
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1N6639E3

Description
Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35, HERMETIC SEALED PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size45KB，2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N6639E3 Overview

Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35, HERMETIC SEALED PACKAGE-2

1N6639E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionO-LALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum output current0.3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

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Download Datasheet
• 1N6639 thru 1N6641AVAILABLE IN
JAN, JANTX, JANTXV,
AND
JANS
PER MIL-PRF-19500/609
• SWITCHING DIODES
• NON-CAVITY GLASS PACKAGE
• METALLURGICALLY BONDED
1N6639
1N6640
1N6641
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 3 mA/°C Above T
L
= +75°C@ = L =
3
/
8
”
Surge Current: I
FSM
= 2.5A, Pw = 8.3ms
0.056/0.075
1.42/1.91
POLARITY
BAND
(CATHODE)
0.140/0.180
3.55/4.57
1.00
25.4
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise speci½ed.
V BRR
@ 10 µA
V RWM
I R1
@ TA = +25°C
VR =
V RWM
nA dc
I R2
@ TA = +150°C
VR =
V RWM
µA dc
T FR
IF
= 200 mA
T RR
CT
VR=0
0.018/0.022
0.46/0.56
TYPES
FIGURE 1
ns
ns
pF
V(PK)
MIN
1N6639
1N6640
1N6641
100
75
75
V(PK)
75
50
50
100
100
100
100
100
100
10
10
10
4.0
4.0
5.0
2.5
2.5
3.0
DESIGN DATA
CASE:
Hermetically sealed, “D” Body
per MIL-PRF- 19500/609. D-5D
FORWARD VOLTAGE:
VF
TYPES
MIN
1N6639
–
0.54
1N6640
0.76
0.82
0.87
1N6641
–
V dC
MAX
1.20
0.62
0.86
0.92
1.00
1.10
@
IF
mA
(PULSED)
500
1
50
100
200
200
LEAD MATERIAL:
Copper clad steel
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJL): 160
°C/W maximum at L = .375
THERMAL IMPEDANCE: (Z
OJX): 25
°C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION:
Any
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
77

1N6639E3 Related Products

1N6639E3 JANTX1N6639 JANTX1N6641 JANTXV1N6639 JANTXV1N6641 JAN1N6639 JAN1N6640 JAN1N6641 1N6641E3 1N6640E3
Description Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35, HERMETIC SEALED PACKAGE-2 DIODE GEN PURP 75V 300MA AXIAL DIODE GEN PURP 50V 300MA AXIAL DIODE GEN PURP 75V 300MA AXIAL DIODE GEN PURP 50V 300MA AXIAL DIODE GEN PURP 75V 300MA AXIAL DIODE GEN PURP 50V 300MA AXIAL DIODE GEN PURP 50V 300MA AXIAL Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35, HERMETIC SEALED PACKAGE-2 Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35, HERMETIC SEALED PACKAGE-2
package instruction O-LALF-W2 SIMILAR TO DO-35, 2 PIN SIMILAR TO DO-35, 2 PIN SIMILAR TO DO-35, 2 PIN SIMILAR TO DO-35, 2 PIN SIMILAR TO DO-35, 2 PIN SIMILAR TO DO-35, 2 PIN SIMILAR TO DO-35, 2 PIN HERMETIC SEALED PACKAGE-2 O-LALF-W2
Reach Compliance Code compliant unknown unknown unknown unknown compliant unknown compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-LALF-W2 O-LALF-W2
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2 2
Maximum output current 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A
Package body material GLASS UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum reverse recovery time 0.004 µs 0.004 µs 0.005 µs 0.004 µs 0.005 µs 0.004 µs 0.004 µs 0.005 µs 0.005 µs 0.004 µs
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maker Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi - Microsemi Microsemi
JEDEC-95 code DO-35 DO-35 DO-35 DO-35 DO-35 - - - DO-35 DO-35
Is it lead-free? - Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead - -
Is it Rohs certified? - incompatible incompatible incompatible incompatible incompatible incompatible incompatible - -
Parts packaging code - DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 - -
Contacts - 2 2 2 2 2 2 2 - -
Other features - METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED - -
JESD-609 code - e0 e0 e0 e0 e0 e0 e0 - -
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - -
Certification status - Qualified Qualified Qualified Qualified Qualified Qualified Qualified - -
Guideline - MIL-19500/609D MIL-19500/609D MIL-19500/609D MIL-19500/609D MIL-19500/609D MIL-19500/609D MIL-19500/609D - -
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - -
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - -

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