1N6641E3 datasheet, PDF - EEWORLD Datasheet

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1N6641E3: DescriptionRectifier Diode, 1 Element, 0.3A, Silicon, DO-35, HERMETIC SEALED PACKAGE-2; CategoryDiscrete semiconductor diode; File Size45KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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1N6641E3 Overview

Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35, HERMETIC SEALED PACKAGE-2

1N6641E3 Parametric

Parameter Name	Attribute value
Maker	Microsemi
package instruction	HERMETIC SEALED PACKAGE-2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-35
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum output current	0.3 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum reverse recovery time	0.005 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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• 1N6639 thru 1N6641AVAILABLE IN

JAN, JANTX, JANTXV,

AND

JANS

PER MIL-PRF-19500/609

• SWITCHING DIODES

• NON-CAVITY GLASS PACKAGE

• METALLURGICALLY BONDED

1N6639

1N6640

1N6641

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Operating Current: 300 mA

Derating: 3 mA/°C Above T

= +75°C@ = L =

”

Surge Current: I

FSM

= 2.5A, Pw = 8.3ms

0.056/0.075

1.42/1.91

POLARITY

BAND

(CATHODE)

0.140/0.180

3.55/4.57

1.00

25.4

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise speci½ed.

V BRR

@ 10 µA

V RWM

I R1

@ TA = +25°C

VR =

V RWM

nA dc

I R2

@ TA = +150°C

VR =

V RWM

µA dc

T FR

= 200 mA

T RR

VR=0

0.018/0.022

0.46/0.56

TYPES

FIGURE 1

V(PK)

MIN

1N6639

1N6640

1N6641

100

V(PK)

100

4.0

5.0

2.5

3.0

DESIGN DATA

CASE:

Hermetically sealed, “D” Body

per MIL-PRF- 19500/609. D-5D

FORWARD VOLTAGE:

TYPES

MIN

1N6639

–

0.54

1N6640

0.76

0.82

0.87

1N6641

–

V dC

MAX

1.20

0.62

0.86

0.92

1.00

1.10

(PULSED)

500

100

200

LEAD MATERIAL:

Copper clad steel

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE: (R

OJL): 160

°C/W maximum at L = .375

THERMAL IMPEDANCE: (Z

OJX): 25

°C/W maximum

POLARITY:

Cathode end is banded.

MOUNTING POSITION:

Any

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

FAX (781) 689-0803

WEBSITE: http://www.microsemi.com

1N6641E3 Related Products

	1N6641E3	JANTX1N6639	JANTX1N6641	JANTXV1N6639	JANTXV1N6641	JAN1N6639	JAN1N6640	JAN1N6641	1N6639E3	1N6640E3
Description	Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35, HERMETIC SEALED PACKAGE-2	DIODE GEN PURP 75V 300MA AXIAL	DIODE GEN PURP 50V 300MA AXIAL	DIODE GEN PURP 75V 300MA AXIAL	DIODE GEN PURP 50V 300MA AXIAL	DIODE GEN PURP 75V 300MA AXIAL	DIODE GEN PURP 50V 300MA AXIAL	DIODE GEN PURP 50V 300MA AXIAL	Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35, HERMETIC SEALED PACKAGE-2	Rectifier Diode, 1 Element, 0.3A, Silicon, DO-35, HERMETIC SEALED PACKAGE-2
package instruction	HERMETIC SEALED PACKAGE-2	SIMILAR TO DO-35, 2 PIN	SIMILAR TO DO-35, 2 PIN	SIMILAR TO DO-35, 2 PIN	SIMILAR TO DO-35, 2 PIN	SIMILAR TO DO-35, 2 PIN	SIMILAR TO DO-35, 2 PIN	SIMILAR TO DO-35, 2 PIN	O-LALF-W2	O-LALF-W2
Reach Compliance Code	compliant	unknown	unknown	unknown	unknown	compliant	unknown	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-LALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-LALF-W2	O-LALF-W2
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2	2	2
Maximum output current	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A
Package body material	GLASS	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum reverse recovery time	0.005 µs	0.004 µs	0.005 µs	0.004 µs	0.005 µs	0.004 µs	0.004 µs	0.005 µs	0.004 µs	0.004 µs
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	-	Microsemi	Microsemi
JEDEC-95 code	DO-35	DO-35	DO-35	DO-35	DO-35	-	-	-	DO-35	DO-35
Is it lead-free?	-	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	-	-
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-	-
Parts packaging code	-	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35	-	-
Contacts	-	2	2	2	2	2	2	2	-	-
Other features	-	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	-	-
JESD-609 code	-	e0	e0	e0	e0	e0	e0	e0	-	-
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
Certification status	-	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	-	-
Guideline	-	MIL-19500/609D	MIL-19500/609D	MIL-19500/609D	MIL-19500/609D	MIL-19500/609D	MIL-19500/609D	MIL-19500/609D	-	-
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-

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