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SF10J41

Description
Silicon Controlled Rectifier, 16 A, 600 V, SCR, TO-220AB
CategoryAnalog mixed-signal IC    Trigger device   
File Size151KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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SF10J41 Overview

Silicon Controlled Rectifier, 16 A, 600 V, SCR, TO-220AB

SF10J41 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Shell connectionANODE
ConfigurationSINGLE
Maximum DC gate trigger current40 mA
Maximum DC gate trigger voltage2 V
Maximum holding current80 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current16 A
Maximum repetitive peak off-state leakage current2000 µA
Off-state repetitive peak voltage600 V
Repeated peak reverse voltage600 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeSCR

SF10J41 Related Products

SF10J41 SF10G41 SF10D41 SF10B41
Description Silicon Controlled Rectifier, 16 A, 600 V, SCR, TO-220AB Silicon Controlled Rectifier, 16 A, 400 V, SCR, TO-220AB Silicon Controlled Rectifier, 16 A, 200 V, SCR, TO-220AB Silicon Controlled Rectifier, 16 A, 100 V, SCR, TO-220AB
Is it Rohs certified? incompatible incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown unknown
Shell connection ANODE ANODE ANODE ANODE
Configuration SINGLE SINGLE SINGLE SINGLE
Maximum DC gate trigger current 40 mA 40 mA 40 mA 40 mA
Maximum DC gate trigger voltage 2 V 2 V 2 V 2 V
Maximum holding current 80 mA 80 mA 80 mA 80 mA
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 16 A 16 A 16 A 16 A
Maximum repetitive peak off-state leakage current 2000 µA 2000 µA 2000 µA 2000 µA
Off-state repetitive peak voltage 600 V 400 V 200 V 100 V
Repeated peak reverse voltage 600 V 400 V 200 V 100 V
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Trigger device type SCR SCR SCR SCR
Maker Toshiba Semiconductor - Toshiba Semiconductor Toshiba Semiconductor
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