Silicon Controlled Rectifier, 16 A, 200 V, SCR, TO-220AB
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Toshiba Semiconductor |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | ANODE |
| Configuration | SINGLE |
| Maximum DC gate trigger current | 40 mA |
| Maximum DC gate trigger voltage | 2 V |
| Maximum holding current | 80 mA |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Certification status | Not Qualified |
| Maximum rms on-state current | 16 A |
| Maximum repetitive peak off-state leakage current | 2000 µA |
| Off-state repetitive peak voltage | 200 V |
| Repeated peak reverse voltage | 200 V |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Trigger device type | SCR |
| SF10D41 | SF10G41 | SF10J41 | SF10B41 | |
|---|---|---|---|---|
| Description | Silicon Controlled Rectifier, 16 A, 200 V, SCR, TO-220AB | Silicon Controlled Rectifier, 16 A, 400 V, SCR, TO-220AB | Silicon Controlled Rectifier, 16 A, 600 V, SCR, TO-220AB | Silicon Controlled Rectifier, 16 A, 100 V, SCR, TO-220AB |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Shell connection | ANODE | ANODE | ANODE | ANODE |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum DC gate trigger current | 40 mA | 40 mA | 40 mA | 40 mA |
| Maximum DC gate trigger voltage | 2 V | 2 V | 2 V | 2 V |
| Maximum holding current | 80 mA | 80 mA | 80 mA | 80 mA |
| JEDEC-95 code | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum rms on-state current | 16 A | 16 A | 16 A | 16 A |
| Maximum repetitive peak off-state leakage current | 2000 µA | 2000 µA | 2000 µA | 2000 µA |
| Off-state repetitive peak voltage | 200 V | 400 V | 600 V | 100 V |
| Repeated peak reverse voltage | 200 V | 400 V | 600 V | 100 V |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| Trigger device type | SCR | SCR | SCR | SCR |
| Maker | Toshiba Semiconductor | - | Toshiba Semiconductor | Toshiba Semiconductor |
京公网安备 11010802033920号
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