SF10G41 datasheet, PDF - EEWORLD Datasheet

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SF10G41: DescriptionSilicon Controlled Rectifier, 16 A, 400 V, SCR, TO-220AB; CategoryAnalog mixed-signal IC Trigger device; File Size151KB，5 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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SF10G41 Overview

Silicon Controlled Rectifier, 16 A, 400 V, SCR, TO-220AB

SF10G41 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
Shell connection	ANODE
Configuration	SINGLE
Maximum DC gate trigger current	40 mA
Maximum DC gate trigger voltage	2 V
Maximum holding current	80 mA
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum rms on-state current	16 A
Maximum repetitive peak off-state leakage current	2000 µA
Off-state repetitive peak voltage	400 V
Repeated peak reverse voltage	400 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Trigger device type	SCR
Base Number Matches	1

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SF10G41 Related Products

	SF10G41	SF10J41	SF10D41	SF10B41
Description	Silicon Controlled Rectifier, 16 A, 400 V, SCR, TO-220AB	Silicon Controlled Rectifier, 16 A, 600 V, SCR, TO-220AB	Silicon Controlled Rectifier, 16 A, 200 V, SCR, TO-220AB	Silicon Controlled Rectifier, 16 A, 100 V, SCR, TO-220AB
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown
Shell connection	ANODE	ANODE	ANODE	ANODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Maximum DC gate trigger current	40 mA	40 mA	40 mA	40 mA
Maximum DC gate trigger voltage	2 V	2 V	2 V	2 V
Maximum holding current	80 mA	80 mA	80 mA	80 mA
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	16 A	16 A	16 A	16 A
Maximum repetitive peak off-state leakage current	2000 µA	2000 µA	2000 µA	2000 µA
Off-state repetitive peak voltage	400 V	600 V	200 V	100 V
Repeated peak reverse voltage	400 V	600 V	200 V	100 V
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Trigger device type	SCR	SCR	SCR	SCR
Maker	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor

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