EEWORLDEEWORLDEEWORLD

Part Number

Search

BT169D-L

Description
Silicon Controlled Rectifier, 0.8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, SC-43A, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size243KB,14 Pages
ManufacturerWeEn Semiconductors
Environmental Compliance
Download Datasheet Parametric View All

BT169D-L Overview

Silicon Controlled Rectifier, 0.8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, SC-43A, 3 PIN

BT169D-L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerWeEn Semiconductors
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
Other featuresSENSITIVE GATE
ConfigurationSINGLE
Maximum DC gate trigger current0.05 mA
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current0.8 A
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR

BT169D-L Preview

IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT169D-L
SCR
20 March 2014
Product data sheet
1. General description
Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92)
plastic package.
2. Features and benefits
Planar passivated for voltage ruggedness and reliability
Very sensitive gate
3. Applications
Ignition circuits
Low power latching circuits
Protection / shut-down circuits: lighting ballasts
Protection / shut-down circuits: Switched Mode Power Supplies
4. Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
state current
t
p
= 10 ms;
Fig. 4; Fig. 5
RMS on-state current
half sine wave; T
lead
≤ 83 °C;
Fig. 2;
Fig. 3
Static characteristics
I
GT
I
H
I
L
gate trigger current
holding current
latching current
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 7
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
G
= 0.5 mA; T
j
= 25 °C;
Fig. 8
-
-
0.4
2
1
4
mA
mA
-
-
50
µA
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
400
400
8
0.8
Unit
V
V
A
A
Scan or click this QR code to view the latest information for this product
TO
-92
NXP Semiconductors
BT169D-L
SCR
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
A
G
K
anode
gate
cathode
321
Simplified outline
Graphic symbol
A
G
sym037
K
TO-92 (SOT54)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT169D-L
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Type number
BT169D-L
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
20 March 2014
2 / 13
NXP Semiconductors
BT169D-L
SCR
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
half sine wave; T
lead
≤ 83 °C;
Fig. 1
half sine wave; T
lead
≤ 83 °C;
Fig. 2;
Fig. 3
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
0.8
P
tot
(W)
0.6
2.8
0.4
4
conduction
angle
(degrees)
30
60
90
120
180
0
0.1
0.2
0.3
0.4
form
factor
a
4
2.8
2.2
1.9
1.57
0.5
α
101
2.2
a = 1.57
1.9
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
400
400
0.5
0.8
9
8
0.32
50
1
5
2
0.1
150
125
001aab446
Unit
V
V
A
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 2 A; I
G
= 10 mA; dI
G
/dt = 100 mA/
µs
A s
A/µs
A
V
W
W
°C
°C
77
T
lead(max)
(°C)
89
over any 20 ms period
-
-40
-
0.2
113
0
I
T(AV)
(A)
125
0.6
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1.
BT169D-L
Total power dissipation as a function of average on-state current; maximum values
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
20 March 2014
3 / 13
NXP Semiconductors
BT169D-L
SCR
2
I
T(RMS)
(A)
1.5
001aab449
1
I
T(RMS)
(A)
0.8
83 °C
001aab450
0.6
1
0.4
0.5
0.2
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
lead
(°C)
f = 50 Hz; T
lead
= 83 °C
Fig. 2.
RMS on-state current as a function of surge
duration for sinusoidal currents
10
I
TSM
(A)
8
Fig. 3.
RMS on-state current as a function of lead
temperature; maximum values
001aab499
6
4
I
T
I
TSM
2
t
t
p
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT169D-L
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
20 March 2014
4 / 13

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2349  221  25  681  868  48  5  1  14  18 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号