VS648 datasheet, PDF - EEWORLD Datasheet

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VS648: DescriptionBridge Rectifier Diode, Avalanche, 1 Phase, 2A, 600V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size78KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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VS648 Overview

Bridge Rectifier Diode, Avalanche, 1 Phase, 2A, 600V V(RRM), Silicon,

VS648 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
package instruction	PLASTIC PACKAGE-4
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JESD-30 code	S-PUFM-W4
JESD-609 code	e0
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED

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VS648 Related Products

	VS648	VS848	VS048	VS447
Description	Bridge Rectifier Diode, Avalanche, 1 Phase, 2A, 600V V(RRM), Silicon,	Bridge Rectifier Diode, Avalanche, 1 Phase, 2A, 800V V(RRM), Silicon, PLASTIC PACKAGE-4	Bridge Rectifier Diode, Avalanche, 1 Phase, 2A, 50V V(RRM), Silicon, PLASTIC PACKAGE-4	Bridge Rectifier Diode, Avalanche, 1 Phase, 2A, 400V V(RRM), Silicon,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Microsemi	Microsemi	Microsemi	Microsemi
package instruction	PLASTIC PACKAGE-4	PLASTIC PACKAGE-4	PLASTIC PACKAGE-4	PLASTIC PACKAGE-4
Reach Compliance Code	not_compliant	unknown	not_compliant	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V	1.2 V	1.2 V
JESD-30 code	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4
JESD-609 code	e0	e0	e0	e0
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A
Number of components	4	4	4	4
Phase	1	1	1	1
Number of terminals	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-50 °C	-50 °C	-50 °C	-50 °C
Maximum output current	2 A	2 A	2 A	2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	600 V	800 V	50 V	400 V
surface mount	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	UPPER	UPPER	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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