Bridge Rectifier Diode, Avalanche, 1 Phase, 2A, 800V V(RRM), Silicon, PLASTIC PACKAGE-4
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| package instruction | PLASTIC PACKAGE-4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode component materials | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.2 V |
| JESD-30 code | S-PUFM-W4 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 50 A |
| Number of components | 4 |
| Phase | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -50 °C |
| Maximum output current | 2 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | SQUARE |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 800 V |
| surface mount | NO |
| technology | AVALANCHE |
| Terminal surface | TIN LEAD |
| Terminal form | WIRE |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| VS848 | VS648 | VS048 | VS447 | |
|---|---|---|---|---|
| Description | Bridge Rectifier Diode, Avalanche, 1 Phase, 2A, 800V V(RRM), Silicon, PLASTIC PACKAGE-4 | Bridge Rectifier Diode, Avalanche, 1 Phase, 2A, 600V V(RRM), Silicon, | Bridge Rectifier Diode, Avalanche, 1 Phase, 2A, 50V V(RRM), Silicon, PLASTIC PACKAGE-4 | Bridge Rectifier Diode, Avalanche, 1 Phase, 2A, 400V V(RRM), Silicon, |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | Microsemi | Microsemi | Microsemi | Microsemi |
| package instruction | PLASTIC PACKAGE-4 | PLASTIC PACKAGE-4 | PLASTIC PACKAGE-4 | PLASTIC PACKAGE-4 |
| Reach Compliance Code | unknown | not_compliant | not_compliant | _compli |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS |
| Diode component materials | SILICON | SILICON | SILICON | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| JESD-30 code | S-PUFM-W4 | S-PUFM-W4 | S-PUFM-W4 | S-PUFM-W4 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Maximum non-repetitive peak forward current | 50 A | 50 A | 50 A | 50 A |
| Number of components | 4 | 4 | 4 | 4 |
| Phase | 1 | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 | 4 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Minimum operating temperature | -50 °C | -50 °C | -50 °C | -50 °C |
| Maximum output current | 2 A | 2 A | 2 A | 2 A |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | SQUARE | SQUARE | SQUARE | SQUARE |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 800 V | 600 V | 50 V | 400 V |
| surface mount | NO | NO | NO | NO |
| technology | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE |
| Terminal surface | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE |
| Terminal location | UPPER | UPPER | UPPER | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
京公网安备 11010802033920号
EEWORLD
