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W01G

Description
Bridge Rectifier Diode, 1.5A, 100V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size91KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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Bridge Rectifier Diode, 1.5A, 100V V(RRM),

W01G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current50 A
Number of components4
Maximum operating temperature125 °C
Maximum output current1.5 A
Maximum repetitive peak reverse voltage100 V
surface mountNO

W01G Preview

W005G - W10G
PRV : 50 - 1000 Volts
Io : 1.5 Ampere
FEATURES :
*
*
*
*
*
*
*
*
Glass passivated chip
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
Pb / RoHS Free
GLASS PASSIVATED SINGLE-PHASE
SILICON BRIDGE RECTIFIERS
WOB
0.39 (10.0)
0.31 (7.87)
0.22 (5.59)
0.18 (4.57)
+
AC
-
1.00 (25.4)
MIN.
1.10 (27.9)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
AC
+
-
AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375" (9.5 mm) lead length
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing
( t < 8.3 ms. )
Ta = 25
°C
Ta = 125
°C
Maximum Forward Voltage per Diode at I
F
= 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL W005G W01G W02G W04G W06G W08G W10G
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
It
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
2
UNIT
V
V
V
A
A
AS
V
µA
mA
pf
°C/W
°C
°C
2
50
35
50
100
70
100
200
140
200
400
280
400
1.5
50
10
1.0
5
0.5
14
36
600
420
600
800
560
800
1000
700
1000
Typical Junction Capacitance per Diode (Note 1)
- 50 to + 150
- 50 to + 150
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting.
Page 1 of 2
Rev. 02 : April 1, 2005
RATING AND CHARACTERISTIC CURVES ( W005G - W10G )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.5
50
PC Board
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
1.2
0.375(9.5mm)
PEAK FORWARD SURGE
CURRENT, AMPERES
40
T
J
= 55
°C
0.9
Copper Pads
0.22" x 0.22" (5.5 x5.5mm)
30
0.6
20
SINGLE HALF SINE WAVE
(JEDEC METHOD)
0.3
60 Hz, Resistive or Inductive load.
0
0
25
50
75
100
125
150
175
10
0
1
2
4
6
10
20
40
60
100
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FORWARD CURRENT, AMPERES
20
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
10
Ta = 100
°C
1.0
1
0.1
T
J
= 25
°C
Pulse Width = 300
µs
1 % Duty Cycle
0.1
Ta = 25
°C
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
0
20
40
60
80
100
120
140
FORWARD VOLTAGE, VOLTS
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : April 1, 2005

W01G Related Products

W01G W10G W005G W04G W06G W02G W08G
Description Bridge Rectifier Diode, 1.5A, 100V V(RRM), Bridge Rectifier Diode, 1.5A, 1000V V(RRM), Bridge Rectifier Diode, 1.5A, 50V V(RRM), Bridge Rectifier Diode, 1.5A, 400V V(RRM), Bridge Rectifier Diode, 1.5A, 600V V(RRM), Bridge Rectifier Diode, 1.5A, 200V V(RRM), Bridge Rectifier Diode, 1.5A, 800V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V 1 V 1 V
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A 50 A 50 A
Number of components 4 4 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum output current 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Maximum repetitive peak reverse voltage 100 V 1000 V 50 V 400 V 600 V 200 V 800 V
surface mount NO NO NO NO NO NO NO

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