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CMPT3904LEADFREE

Description
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size327KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
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CMPT3904LEADFREE Overview

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

CMPT3904LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCentral Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)250 ns
Maximum opening time (tons)70 ns
CMPT3904 CMPT3904G*
CMPT3906 CMPT3906G*
NPN
PNP
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices are
complementary silicon transistors manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for small signal general
purpose amplifier and switching applications.
SOT-23 CASE
*
Device is
Halogen Free
by design
MARKING CODES: CMPT3904:
CMPT3906:
CMPT3904G*:
CMPT3906G*:
C1A
C2A
CG1
CG2
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
CMPT3904
CMPT3906
CMPT3904G* CMPT3906G*
60
40
40
6.0
200
350
-65 to +150
357
CMPT3906
CMPT3906G*
MIN
MAX
-
50
-
40
40
5.0
-
-
0.65
-
60
80
100
60
30
50
-
-
-
0.25
0.40
0.85
0.95
-
-
300
-
-
40
5.0
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
SYMBOL
TEST CONDITIONS
ICEV
VCE=30V, VEB=3.0V
IBL
VCE=30V, VEB=3.0V
BVCBO
IC=10μA
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA,
IC=50mA,
IB=1.0mA
IB=5.0mA
IC=0.1mA
CMPT3904
CMPT3904G*
MIN
MAX
-
50
-
60
40
6.0
-
-
0.65
-
40
70
100
60
30
50
-
-
-
0.20
0.30
0.85
0.95
-
-
300
-
-
UNITS
nA
nA
V
V
V
V
V
V
V
VCE=1.0V,
VCE=1.0V,
IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
R7 (1-February 2010)

CMPT3904LEADFREE Related Products

CMPT3904LEADFREE CMPT3906LEADFREE CMPT3906GBKLEADFREE
Description Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Transistor
Is it Rohs certified? conform to conform to conform to
Maker Central Semiconductor Central Semiconductor Central Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 ,
Reach Compliance Code compliant compliant compliant
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Configuration SINGLE SINGLE Single
Minimum DC current gain (hFE) 30 30 100
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN PNP PNP
surface mount YES YES YES
Nominal transition frequency (fT) 300 MHz 250 MHz 250 MHz
Is it lead-free? Lead free Lead free -
Contacts 3 3 -
ECCN code EAR99 EAR99 -
Collector-emitter maximum voltage 40 V 40 V -
JESD-30 code R-PDSO-G3 R-PDSO-G3 -
JESD-609 code e3 e3 -
Humidity sensitivity level 1 1 -
Number of components 1 1 -
Number of terminals 3 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 260 -
Maximum power dissipation(Abs) 0.35 W - 0.35 W
Certification status Not Qualified Not Qualified -
Terminal surface Matte Tin (Sn) MATTE TIN (315) -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature 10 10 -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Maximum off time (toff) 250 ns 300 ns -
Maximum opening time (tons) 70 ns 70 ns -

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