CMPT3906GBKLEADFREE datasheet, PDF

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CMPT3906GBKLEADFREE: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size327KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CMPT3906GBKLEADFREE Overview

Transistor

CMPT3906GBKLEADFREE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	,
Reach Compliance Code	compliant
Maximum collector current (IC)	0.2 A
Configuration	Single
Minimum DC current gain (hFE)	100
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
surface mount	YES
Nominal transition frequency (fT)	250 MHz

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CMPT3904 CMPT3904G*

CMPT3906 CMPT3906G*

NPN

PNP

w w w. c e n t r a l s e m i . c o m

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

These CENTRAL SEMICONDUCTOR devices are

complementary silicon transistors manufactured by the

epitaxial planar process, epoxy molded in a surface

mount package, designed for small signal general

purpose amplifier and switching applications.

SOT-23 CASE

Device is

Halogen Free

by design

MARKING CODES: CMPT3904:

CMPT3906:

CMPT3904G*:

CMPT3906G*:

C1A

C2A

CG1

CG2

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

CMPT3904

CMPT3906

CMPT3904G* CMPT3906G*

6.0

200

350

-65 to +150

357

CMPT3906

CMPT3906G*

MIN

MAX

5.0

0.65

100

0.25

0.40

0.85

0.95

300

5.0

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C)

SYMBOL

TEST CONDITIONS

ICEV

VCE=30V, VEB=3.0V

IBL

VCE=30V, VEB=3.0V

BVCBO

IC=10μA

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

IC=1.0mA

IE=10μA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

IC=10mA,

IC=50mA,

IB=1.0mA

IB=5.0mA

IC=0.1mA

CMPT3904

CMPT3904G*

MIN

MAX

6.0

0.65

100

0.20

0.30

0.85

0.95

300

UNITS

VCE=1.0V,

IC=1.0mA

VCE=1.0V, IC=10mA

VCE=1.0V, IC=50mA

VCE=1.0V, IC=100mA

R7 (1-February 2010)

CMPT3906GBKLEADFREE Related Products

	CMPT3906GBKLEADFREE	CMPT3906LEADFREE	CMPT3904LEADFREE
Description	Transistor	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	,	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant	compliant	compliant
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A
Configuration	Single	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	30	30
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	NPN
surface mount	YES	YES	YES
Nominal transition frequency (fT)	250 MHz	250 MHz	300 MHz
Maximum power dissipation(Abs)	0.35 W	-	0.35 W
Is it lead-free?	-	Lead free	Lead free
Contacts	-	3	3
ECCN code	-	EAR99	EAR99
Collector-emitter maximum voltage	-	40 V	40 V
JESD-30 code	-	R-PDSO-G3	R-PDSO-G3
JESD-609 code	-	e3	e3
Humidity sensitivity level	-	1	1
Number of components	-	1	1
Number of terminals	-	3	3
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	260	260
Certification status	-	Not Qualified	Not Qualified
Terminal surface	-	MATTE TIN (315)	Matte Tin (Sn)
Terminal form	-	GULL WING	GULL WING
Terminal location	-	DUAL	DUAL
Maximum time at peak reflow temperature	-	10	10
transistor applications	-	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON
Maximum off time (toff)	-	300 ns	250 ns
Maximum opening time (tons)	-	70 ns	70 ns

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