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BD911

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size119KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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POWER TRANSISTOR

BD911 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE POWER
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PLASTIC POWER TRANSISTORS
BD 905, 907, 909, 911
NPN
BD906,
908, 910, 912
PNP
TO-220
Plastic Package
Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Emitter and Collector Current
Base Current
Total Power Dissipation up to Tc=25
o
C
Junction Temperature
Temperature Range
V
CEO
V
CBO
V
EBO
I
E
, I
C
I
B
P
tot
T
j
T
stg
905
906
45
45
907
908
60
60
909
911
910
912
80
100
80
100
5.0
15
5.0
90
150
-65 to +150
UNIT
V
V
V
A
A
W
ºC
ºC
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL
Breakdown (sus) Voltage
Collector-Cut off Current
V
CEO(sus)
* I
C
=50mA, I
B
=0
I
CEO
V
CE
=30V, I
B
=0
V
CE
=40V, I
B
=0
V
CE
=50V, I
B
=0
I
E
=0,V
CB
=Rated
V
CBO
,
I
E
=0,V
CB
=Rated
V
CBO
,
T
c
=150°C
V
EB
=5V, I
C
=O
I
C
=5A, I
B
=0.5A
I
C
=10A, I
B
=2.5A
I
C
=10A, I
B
=2.5A
905
906
45
1.0
907
908
60
1.0
909
910
80
911
912
100
UNIT
V
mA
mA
mA
mA
mA
1.0
1.0
0.5
5
I
CBO
Emitter-Cut off Current
Saturation Voltages
I
EBO
V
CE(Sat)
*
V
BE(sat)
*
1.0
1.0
3.0
2.5
mA
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4
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