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CC337A

Description
PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS
File Size173KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
Download Datasheet View All

CC337A Overview

PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CC327, CC327A, CC328 (PNP)
CC337, CC337A, CC338 (NPN)
TO-92
BCE
E
CB
Complementary Transistors For Use in Driver And Output Stages of Audio Amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current Continuous
Peak
Emitter Current Peak
Base Current Continuous
Base Current Peak
Power Dissipation@ Ta=25 deg C
Derate Above 25 deg C
Operating & Storage Junction
Temperature Range
THERMAL RESISTANCE
From Junction to Ambient in Free Air
VCE0
VCES
VEBO
IC
ICM
IEM
IB
IBM
PTA
Tj, Tstg
CC327
CC337
45
50
CC327A
CC337A
60
60
5.0
500
1.0
1.0
100
200
625
5
-65 to +150
CC328
CC338
25
30
UNITS
V
V
V
mA
A
A
mA
mA
mW
mW/deg C
deg C
Rth(j-a)
200
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
CC327 CC327A
CC328 UNITS
CC337 CC337A
CC338
VCEO
IC=10mA,IB=0
>45
>60
>25
V
Collector -Emitter Voltage
VCES
IC=100uA.IE=0
>50
>60
>30
V
>5.0
VEBO
IE=10uA, IC=0
V
Emitter-Base Voltage
<100
ICBO
VCB=20V, IE=0
nA
Collector-Cut off Current
<5.0
VCB=20V, IE=0, Tj=150 deg C
uA
<10
IEBO
VEB=5V, IC=0
uA
Emitter Cut off Current
Continental Device India Limited
Data Sheet
Page 1 of 3
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