ACT-S128K32V High Speed 3.3Volt
4 Megabit SRAM Multichip Module
Features
4 Low Power CMOS 128K x 8 SRAMs in one MCM
s
Overall configuration as 128K x 32
s
Input and Output TTL Compatible
s
17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by
Special Order
s
Full Military (-55°C to +125°C) Temperature Range
s
+5V Power Supply
s
Choice of 5 Hermetically sealed Co-fired Packages:
s
68–Lead, Dual-Cavity CQFP (F2), 0.88"SQ x 0.20"max (0.18"max thickness
available, contact factory for details)
(Drops into the 68 Lead JEDEC 0.99"SQ
CQFJ footprint)
q
66–Lead, PGA-Type (P2,P6 with/without shoulders), 1.185"SQ x 0.245"max
q
66–Lead, PGA-Type (P7,P3 with/without shoulders), 1.08"SQ x 0.160"max
q
www.aeroflex.com/act1.htm
CIRCUIT TECHNOLOGY
General Description
Utilizing Samsung SRAM die,
the ACT–S128K32V is a High
Speed 4 megabit CMOS SRAM
Multichip
Module
(MCM)
designed for full temperature
range, 3.3V Power Supply,
military,
space,
or
high
reliability mass memory and
fast cache applications.
The MCM can be organized
as a 128K x 32 bits, 256K x 16
bits or 512k x 8 bits device and
is input and output TTL
compatible.
Writing
is
executed when the write enable
(WE) and chip enable (CE)
inputs are low. Reading is
accomplished when WE is high
and CE and output enable (OE)
are both low. Access time
grades of 17ns, 20ns, 25ns,
35ns, 45ns and 55ns maximum
are standard.
The products are designed for
operation over the temperature
range of -55°C to +125°C and
screened under the full military
environment. DESC Standard
Military Drawing (SMD) part
numbers are pending.
The
ACT-S128K32V
is
manufactured in Aeroflex’s
80,000ft
2
MIL-PRF-38534
certified facility in Plainview,
N.Y.
s
Internal Decoupling Capacitors
s
DESC SMD# Pending
Block Diagram – PGA Type Package(P2,P3) & CQFP(F2)
WE
1
CE
1
WE
2
CE
2
WE
3
CE
3
WE
4
CE
4
A
0
– A
16
OE
128Kx8
128Kx8
128Kx8
128Kx8
8
I/O
0-7
8
I/O
8-15
8
I/O
16-23
8
I/O
24-31
Pin Description
I/O
0-31
A
0–16
WE
1–4
CE
1–4
OE
V
cc
GND
NC
Data I/O
Address Inputs
Write Enables
Chip Enables
Output Enable
Power Supply
Ground
Not Connected
eroflex Circuit Technology - Advanced Multichip Modules © SCD3359 REV A 10/4/97
Absolute Maximum Ratings
Symbol
T
C
T
STG
P
D
Storage Temperature
Maximum Package Power Dissipation
F1, P2/P6, P3/P7 Packages
F2 Package
Ø
J-C
Hottest Die, Max Thermal Resistance - Junction to Case
F1, P2/P6, P3/P7 Packages
F2 Package
V
G
T
L
Maximum Signal Voltage to Ground
Maximum Lead Temperature (10 seconds)
3.0
9.0
-0.5 to +7
300
°C/W
°C/W
V
°C
3.0
2.7
W
W
Rating
Case Operating Temperature
Range
-55 to +125
-65 to +150
Units
°C
°C
Normal Operating Conditions
Symbol
V
CC
V
IH
V
IL
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Minimum
+3.0
+2.0
-0.3
Maximum
+3.6
V
CC
+ 0.3
+0.8
Units
V
V
V
Truth Table
Mode
Standby
Read
Read
Write
CE
H
L
L
L
OE
X
L
H
X
WE
X
H
H
L
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby (deselect/power down)
Active
Active (deselected)
Active
Capacitance
(
f = 1MHz, T
C
= 25°C
)
Symbol Parameter
C
AD
C
OE
C
WE
C
CE
C
I
/
O
A
0
–
A
16
Capacitance
OE Capacitance
Write Enable Capacitance
Chip Enable Capacitance
I/O
0
– I/O
31
Capacitance
Maximum
50
50
20
20
20
Units
pF
pF
pF
pF
pF
Capacitance is guaranteed by design but not tested.
(3.0Vdc< V
CC
< 3.6Vdc, V
SS
= 0V, T
C
= -55°C to +125°C, Unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current 32 Bit
Mode
Sym
I
LI
I
LO
Conditions
V
CC
= Max,
V
IN
= 0 or V
CC
CE = V
IH
, OE = V
IH
,
V
OUT
= 0 or V
CC
–017 & –020 –025 & –035 –045 & –055
Units
Min Max
Min Max
Min Max
10
10
10
10
10
10
µA
µA
DC Characteristics
CE = V
IL
, OE = V
IH
,
I
CC
x32 f = 5 MHz, V
CC
= Max,
CMOS Compatible
600
500
420
mA
Aeroflex Circuit Technology
2
SCD3359 REV A 10/3/97 Plainview NY (516) 694-6700
(3.0Vdc< V
CC
< 3.6Vdc, V
SS
= 0V, T
C
= -55°C to +125°C, Unless otherwise specified)
Parameter
Sym
Conditions
CE = V
IH
, OE = V
IH
,
f = 5 MHz, V
CC
= Max,
CMOS Compatible
I
OL
= 8 mA, V
CC
= Min
I
OH
= -4.0 mA, V
CC
= Min
2.4
–017 & –020 –025 & –035 –045 & –055
Units
Min Max
Min Max
Min Max
80
0.4
2.4
60
0.4
2.4
60
0.4
mA
V
V
DC Characteristics
Standby Current
Output Low Voltage
Output High Voltage
I
SB
V
OL
V
OH
(V
CC
= 3.3V, V
SS
= 0V, T
C
= -55°C to +125°C)
AC Characteristics
Read Cycle
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Output Enable to Output Valid
Chip Enable to Output in Low Z *
Output Enable to Output in Low Z *
Chip Deselect to Output in High Z *
Output Disable to Output in High Z *
Sym
t
RC
t
AA
t
ACE
t
OH
t
OE
t
CLZ
t
OLZ
t
CHZ
t
OHZ
3
0
12
10
0
9
3
0
12
11
–017
Min Max
17
17
17
0
12
3
0
12
12
–020
Min Max
20
20
20
5
15
3
0
15
15
–025
Min Max
25
25
25
5
20
3
0
20
20
–035
Min Max
35
35
35
5
25
3
0
20
20
–045
–055
Min Max Min Max
45
45
45
5
30
55
55
55
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
* Parameters guaranteed by design but not tested
Write Cycle
Parameter
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Output Active from End of Write *
Write to Output in High Z *
Data Hold from Write Time
Address Hold Time
Sym
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
OW
t
WHZ
t
DH
t
AH
0
0
–020
–025
–035
–045
–055
–017
Min Max Min Max Min Max Min Max Min Max Min Max
17
12
12
10
13
0
3
10
0
0
20
15
15
12
15
0
3
10
0
0
25
20
20
15
20
0
3
10
0
0
35
25
25
18
25
0
4
15
0
0
45
30
30
20
30
0
4
15
0
0
55
40
40
20
40
0
4
15
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
* Parameters guaranteed by design but not tested
Aeroflex Circuit Technology
3
SCD3359 REV A 10/3/97 Plainview NY (516) 694-6700
(3.0Vdc< V
CC
< 3.6Vdc, V
SS
= 0V, T
C
= -55°C to +125°C, Unless otherwise specified)
AC Characteristics
Read Cycle
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Output Enable to Output Valid
Chip Enable to Output in Low Z *
Output Enable to Output in Low Z *
Chip Deselect to Output in High Z *
Output Disable to Output in High Z *
Sym
t
RC
t
AA
t
ACE
t
OH
t
OE
t
CLZ
t
OLZ
t
CHZ
t
OHZ
3
0
12
12
0
10
3
0
12
12
–017
Min Max
17
17
17
0
12
3
0
12
12
–020
Min Max
20
20
20
0
15
3
0
20
20
–025
Min Max
25
25
25
0
20
3
0
20
20
–035
Min Max
35
35
35
0
25
3
0
20
20
–045
–055
Min Max Min Max
45
45
45
0
30
55
55
55
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
* Parameters guaranteed by design but not tested
Write Cycle
Parameter
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Output Active from End of Write *
Write to Output in High Z *
Data Hold from Write Time
Address Hold Time
Sym
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
OW
t
WHZ
t
DH
t
AH
0
0
–020
–025
–035
–045
–055
–017
Min Max Min Max Min Max Min Max Min Max Min Max
17
14
15
10
14
0
3
10
0
0
20
15
15
12
15
0
3
12
0
0
25
20
20
15
20
0
3
15
0
0
35
25
25
20
25
0
4
20
0
0
45
30
30
25
30
0
4
25
0
0
55
45
45
25
45
0
4
25
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
* Parameters guaranteed by design but not tested
Data Retention Electrical Characteristics (Special Order Only)
(T
C
= -55°C to +125°C)
Test Conditions
CE
≥
V
CC
– 0.2V
V
CC
= 3V, 17-55ns
Parameter
V
CC
for Data Retention
Data Retention Current
Sym
V
DR
I
CCDR1
All Speeds
Min
Max
2
3.6
10.4
Units
V
mA
Aeroflex Circuit Technology
4
SCD3359 REV A 10/3/97 Plainview NY (516) 694-6700
Timing Diagrams
Read Cycle Timing Diagrams
Read Cycle 1 (CE = OE = V
IL
, WE = V
IH
)
t
RC
A
0-16
t
AA
t
OH
D
I/O
Previous Data Valid
Data Valid
CE
t
AS
WE
S
EE
N
OTE
Write Cycle Timing Diagrams
Write Cycle 1 (WE Controlled, OE = V
IL
)
t
WC
A
0-16
t
AW
t
CW
t
AH
t
WP
S
EE
N
OTE
t
OW
t
WHZ
t
DW
Data Valid
t
DH
D
I/O
Read Cycle 2 (WE = V
IH
)
t
RC
A
0-16
t
AA
CE
t
ACE
t
CLZ
S
EE
N
OTE
Write Cycle 2 (CE Controlled, OE = V
IH
)
t
WC
A
0-16
t
AW
t
CHZ
S
EE
N
OTE
t
AH
t
CW
t
AS
CE
OE
t
WP
t
OE
t
OLZ
S
EE
N
OTE
t
OHZ
S
EE
N
OTE
WE
t
DW
t
DH
D
I/O
High Z
Data Valid
D
I/O
Data Valid
UNDEFINED
DON’T CARE
Note: Guaranteed by design, but not tested.
Note: Guaranteed by design, but not tested.
AC Test Circuit
Current Source
I
OL
To Device Under Test
C
L
=
50 pF
I
OH
Current Source
V
Z
~ 1.5 V (Bipolar Supply)
Parameter
Input Pulse Level
Input Rise and Fall
Input and Output Timing Reference
Output Lead Capacitance
Typical
0 – 3.0
5
1.5
50
Units
V
ns
V
pF
Notes:
1) V
Z
is programmable from -2V to +7V. 2) I
OL
and I
OH
programmable from 0 to 16 mA. 3) Tester Impedance
Z
O
= 75Ω.
4)
V
Z
is typically the midpoint of V
OH
and V
OL
. 5) I
OL
and I
OH
are adjusted to simulate a typical resistance
load circuit. 6) ATE Tester includes jig capacitance.
Aeroflex Circuit Technology
5
SCD3359 REV A 10/3/97 Plainview NY (516) 694-6700
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