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PH862C12

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 120V V(RRM), Silicon, TO-247, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size63KB,3 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric View All

PH862C12 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 120V V(RRM), Silicon, TO-247, PLASTIC PACKAGE-3

PH862C12 Parametric

Parameter NameAttribute value
MakerFuji Electric Co., Ltd.
Parts packaging codeTO-247
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
applicationHIGH VOLTAGE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current75 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage120 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

PH862C12 Preview

PH862C12
(10A)
High Voltage Schottky barrier diode
Major characteristics
Characteristics
PH862C12
Units Condition
V
RRM
V
F
I
O
120
0.88
10
V
V
A
Tc=25°C MAX.
(120V / 10A )
[0401]
Outline drawings, mm
11.6±0.2
Features
Low V
F
High Voltage
Center tap connection
Applications
High frequency operation
DC-DC converters
AC adapter
Connection diagram
Package : TO-247
Epoxy resin UL : V-0
1
2
3
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C Unless otherwise specified )
Item
Repetitive peak surge reverse voltage
Repetitive peak reverse voltage
Average output current
Non-repetitive surge current **
Operating junction temperature
Storage temperature
Symbol
V
RSM
V
RRM
I
o
I
FSM
T
j
T
stg
Square wave, duty=
1/2
Tc=137°C
Sine wave
10ms 1shot
Conditions
tw=500ns, duty=1/40
Rating
120
120
10 *
75
+150
-40 to +150
Unit
V
V
A
A
°C
°C
*
Out put current of center tap full wave connection
**Rating per element
Electrical characteristics (at Tc=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
V
F
I
R
Rth(j-c)
Conditions
I
FM
=10A
V
R
=V
RRM
Junction to case
Max.
0.88
150
2.0
Unit
V
µA
°C/W
Mechanical characteristics
Mounting torque
Approximate mass
Recommended torque
0.4 to 0.6
4.9
N·m
g
(120V / 10A )
Characteristics
Forward Characteristic (typ.)
10
1
PH862C12 (10A)
Reverse Characteristic (typ.)
Tj=150°C
Tj=125°C
I F Forward Current (A)
I R Reverse Current (mA)
10
10
0
Tj=100°C
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
10
-1
1
10
-2
Tj= 25°C
10
-3
0.1
0.0
10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-4
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
V F Forward Voltage (V)
V R Reverse Voltage (V)
Forward Power Dissipation (max.)
8
Io
Reverse Power Dissipation (max.)
4
360°
W F Forward Power Dissipation (W)
P R Reverse Power Dissipation (W)
λ
DC
V
R
α
6
360°
Square wave
λ
=60°
Square wave
λ
=120°
Sine wave
λ
=180°
4
Square wave
λ
=180°
DC
2
α
=180°
2
Per 1element
0
0
2
4
6
0
0
20
40
60
80
100
120
140
I o Average Forward Current (A)
VR
Reverse Voltage
(V)
Current Derating (Io-Tc) (max.)
160
Junction Capacitance Characteristic (max.)
1000
150
140
DC
Sine wave
λ
=180°
Square wave
λ
=180°
Square wave
λ
=120°
Square wave
λ
=60°
Case Temperature
Junction Capacitance (pF)
Cj
(°C)
130
100
120
360°
λ
Io
VR=60V
Tc
110
100
0
5
10
15
10
1
10
100
1000
λ
:Conduction angle of forward current for each rectifier element
Io
Average Output Current
(A)
VR
Reverse Voltage (V)
Io:Output current of center-tap full wave connection
(120V / 10A )
Surge Capability (max.)
1000
1000
PH862C12 (10A)
Surge Current Ratings (max.)
(A)
IFSM PeakHAlf-WaveCurrent (A)
Peak Half - Wave Current
100
100
I FSM
10
1
10
100
10
1
10
100
1000
Number of Cycles at 50Hz
tTime (ms) Sinewave
Transient Thermal Impedance (max.)
10
1
(°C/W)
Rth j-c:2.0°C/W
Transient Thermal Impedance
10
0
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec.)
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