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MJ2955

Description
15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
Categorysemiconductor    Discrete semiconductor   
File Size182KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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MJ2955 Overview

15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA

MJ2955 Parametric

Parameter NameAttribute value
Number of terminals2
Transistor polarityPNP
Maximum collector current15 A
Maximum Collector-Emitter Voltage60 V
Processing package descriptionCASE 1-07, TO-3, 2 PIN
stateACTIVE
packaging shaperound
Package SizeFlange mounting
Terminal formPIN/PEG
terminal coatingtin lead
Terminal locationBOTTOM
Packaging MaterialsMetal
structuresingle
Shell connectionCOLLECTOR
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor5
Rated crossover frequency2.5 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER TRANSISTORS
2N3055 NPN
MJ2955 PNP
TO-3
Metal Can Package
General Purpose Switching and Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage(R
BE
=100Ω)
Emitter Base Voltage
Collector Current Continuous
Base Current
Power Dissipation @ T
c
=25ºC
Derate Above 25ºC
Operating
And
Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
R
th(j-c)
1.52
ºC/W
SYMBOL
V
CBO
V
CEO
V
CER
V
EBO
I
C
I
B
P
tot
T
j
, T
stg
VALUE
100
60
70
7
15
7
115
0.657
- 65 to +200
UNITS
V
V
V
V
A
A
W
W/ºC
ºC
ELECTRICAL CHARACTERISTICS (T
C
=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Sustaing Voltage
Collector Emitter Sustaing Voltage
Collector Cut
Off
Current
SYMBOL
V
CEO(sus)
*
V
CER(sus)
*
I
CEX
TEST CONDITION
I
C
=200mA, I
B
=0
I
C
=200mA, R
BE
=100Ω
V
CE
=100V, V
BE
=(off)=1.5V
T
c
=150ºC
V
CE
=100V, V
BE
=(off)=1.5V
V
CE
=30V, I
B
=0
V
BE
=7V, I
C
=0
I
C
=4A, I
B
=400mA
I
C
=10A, I
B
=3.3A
I
C
=4A, V
CE
=4V
I
C
=4A, V
CE
=4V
I
C
=10A, V
CE
=4V
MIN
60
70
MAX
UNITS
V
V
mA
1.0
Collector Cut
Off
Current
Emitter Cut
Off
Current
Collector Emitter Saturation Voltage
Base Emitter on Voltage
DC Current Gain
I
CEO
I
EBO
V
CE(Sat)
*
V
BE(on)
*
h
FE
*
20
5
5.0
0.7
5.0
1.1
3.0
1.5
70
mA
mA
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4

MJ2955 Related Products

MJ2955 2N3055NPN MJ2955PNP 2N3055
Description 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA 15 A, 70 V, NPN, Si, POWER TRANSISTOR, TO-204AA
Number of terminals 2 2 2 2
Transistor polarity PNP PNP PNP NPN
Maximum collector current 15 A 15 A 15 A 15 A
Maximum Collector-Emitter Voltage 60 V 60 V 60 V 70 V
Processing package description CASE 1-07, TO-3, 2 PIN CASE 1-07, TO-3, 2 PIN CASE 1-07, TO-3, 2 PIN TO-3, 2 PIN
state ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape round round round ROUND
Package Size Flange mounting Flange mounting Flange mounting FLANGE MOUNT
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
terminal coating tin lead tin lead tin lead TIN LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Packaging Materials Metal Metal Metal METAL
structure single single single SINGLE
Number of components 1 1 1 1
Transistor component materials silicon silicon silicon SILICON
Transistor type universal power supply universal power supply universal power supply GENERAL PURPOSE POWER
Minimum DC amplification factor 5 5 5 5
Shell connection COLLECTOR COLLECTOR COLLECTOR -
transistor applications switch switch switch -
Rated crossover frequency 2.5 MHz 2.5 MHz 2.5 MHz -
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